VOLTAGE REGULATOR HAVING HIGH VOLTAGE PROTECTION

• US 20070229149A1
• Filed: 03/30/2006
• Published: 10/04/2007
• Est. Priority Date: 03/30/2006
• Status: Abandoned Application

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk Corporation (Western Digital Corporation)
• Inventors: Pan, Feng, Govindu, Prashanti
• Application Number:
  US11/278,108
• Publication Number:
  US 20070229149A1
• Time in Patent Office: Days
• US Class Current: 327/543
• CPC Class Codes: H02M 1/0025 Arrangements for modifying reference values, feedback values or error values in the control loop of a converter
• CPC Class Codes: H02M 1/0032 Control circuits allowing low power mode operation, e.g. in standby mode
• CPC Class Codes: H02M 1/0048 Circuits or arrangements for reducing losses using snubbers H02M1/34
• CPC Class Codes: H02M 3/073 Charge pumps of the Schenkel-type
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

A high voltage device is connected in a voltage divider and couples a regulated voltage to a comparator for voltage regulation. The high voltage device is biased to conduct a current during regulator operation. When regulator operation is terminated, a switch in the voltage divider is opened to terminate current flow in the voltage divider. While the regulated output voltage can be coupled to the high voltage device when the switch is opened, the device node coupled to the comparator remains at a voltage level determined by the device bias voltage and the turn on voltage, V_T, of the device, or V bias −V_T, when the switch is opened. In one embodiment, the high voltage device comprises a field effect transistor having sufficient width to accommodate the voltage drop across the source and drain.

Claims

1. A resistor divider circuit for providing an output voltage comprising:

a) first and second serially coupled resistors,

b) an on/off switch serially coupled between the first and second resistors and a ground terminal, and

c) a high voltage device coupled between the first and second resistors, one node of the high voltage device providing an output voltage when the on/off switch is on, the high voltage device protecting the node from the output voltage when then on/off switch is off.

2. The resistor divider circuit as defined by claim 1 wherein the high voltage device comprises a field effect transistor having sufficient width between source and drain to sustain high voltage stress and withstand the output voltage.

3. The resistor divider circuit as defined by claim 2 wherein the field effect transistor has a gate terminal which is biased (V bias) for conduction with the on/off switch on, the bias voltage less turn on voltage of the field effect transistor (V_T) being impressed on the one node of the field effect transistor when the on/off switch is off.

4. The resistor divider circuit of claim 2 wherein the field effect transistor has a gate terminal which receives on and off bias voltage when the on/off switch is on and off, respectively.

5. The resistor divider circuit of claim 1 wherein the output voltage is provided to a comparator in a voltage regulation circuit.

6. A voltage generation circuit comprising:

a charge pump circuit that receives an input voltage and outputs and output voltage at an output terminal, the output voltage being greater than the input voltage, and a charge pump circuit having a control terminal;

a switch operably connected to a ground terminal,

a resistor divider operably connected to the switch and to the output terminal of the charge pump circuit, the resistor divider providing a divided voltage, the divided voltage being less than the output voltage of the charge pump circuit,

a high voltage device coupled in the voltage divider with a node of the high voltage device providing a voltage for comparison when the switch is turned on, the high voltage device protecting the node from the output voltage when the switch is off, and

a comparator operably connected to the node of the high voltage device and to a reference voltage, the comparator comparing the divided voltage to the reference voltage to produce a first control signal that is supplied to the control terminal of the charge pump circuit.

7. The voltage generation circuit as defined by claim 6 wherein the high voltage device comprises a field effect transistor having sufficient source to drain width to withstand the output voltage.

8. The voltage generation circuit as defined by claim 7 wherein the field effect transistor has a gate terminal which is biased (V bias) for conduction during comparator enablement with the switch on, the bias voltage less turn on voltage of the field effect transistor (VT) being impressed on the one node of the field effect transistor when the switch is turned off.

9. The voltage generation circuit of claim 7 wherein the field effect transistor has a gate terminal which receives on and off bias voltage when the on/off switch is on and off, respectively.