FILM THICKNESS MEASURING METHOD OF MEMBER TO BE PROCESSED USING EMISSION SPECTROSCOPY AND PROCESSING METHOD OF THE MEMBER USING THE MEASURING METHOD

• US 20070229845A1
• Filed: 06/07/2007
• Published: 10/04/2007
• Est. Priority Date: 06/20/2000
• Status: Active Grant

• Current Assignee: Motohiko Yoshigai, Takashi Fujii, Tatehito Usui, Tetsunori Kaji
• Original Assignee: Motohiko Yoshigai, Takashi Fujii, Tatehito Usui, Tetsunori Kaji
• Inventors: Fujii, Takashi, Yoshigai, Motohiko, Usui, Tatehito, Kaji, Tetsunori
• Granted Patent: US 7,411,684 B2
• Time in Patent Office: Days
• US Class Current: 356/503
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: Y10T 436/106664 Blood serum or blood plasma standard or control

Abstract

A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.

Claims

1. A system comprising:

a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including;

a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;

a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed;

a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and

a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.