Circuit substrate and electronic apparatus, fabrication process thereof
First Claim
1. A circuit substrate comprising a lamination of plural resin insulation films and including, on a surface and in an interior of said circuit substrate, plural interconnection layers,one of said plural resin insulation films being formed on a first conductor pattern constituting one of said plural interconnection layers in such a manner that a bottom principal surface of said resin insulation film makes a contact with a surface of said first conductor pattern,said resin insulation film including an opening defined by a sloped surface and exposing said first conductor pattern at said bottom principal surface,a ceramic high-K dielectric film being formed at a bottom of said opening in contact with said surface of said first conductor pattern,wherein there is formed a second conductor pattern constituting one of said plural interconnection layers on said resin insulation film so as to cover said sloped surface and in contact with a surface of said ceramic high-K dielectric film.
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Accused Products
Abstract
A circuit substrate comprises a lamination of plural resin insulation films and includes, on a surface and in an interior of the circuit substrate, plural interconnection layers. One of the plural resin insulation films is formed on a first conductor pattern constituting one of the plural interconnection layers in such a manner that a bottom principal surface of the resin insulation film makes a contact with a surface of the first conductor pattern, the resin insulation film including an opening defined by a sloped surface and exposing the first conductor pattern at the bottom principal surface. A ceramic high-K dielectric film is formed at a bottom of the opening in contact with the surface of the first conductor pattern, wherein there is formed a second conductor pattern constituting one of the plural interconnection layers on the resin insulation film so as to cover the sloped surface and in contact with a surface of the ceramic high-K dielectric film.
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Citations
8 Claims
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1. A circuit substrate comprising a lamination of plural resin insulation films and including, on a surface and in an interior of said circuit substrate, plural interconnection layers,
one of said plural resin insulation films being formed on a first conductor pattern constituting one of said plural interconnection layers in such a manner that a bottom principal surface of said resin insulation film makes a contact with a surface of said first conductor pattern, said resin insulation film including an opening defined by a sloped surface and exposing said first conductor pattern at said bottom principal surface, a ceramic high-K dielectric film being formed at a bottom of said opening in contact with said surface of said first conductor pattern, wherein there is formed a second conductor pattern constituting one of said plural interconnection layers on said resin insulation film so as to cover said sloped surface and in contact with a surface of said ceramic high-K dielectric film.
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3. An electronic apparatus, comprising:
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a circuit substrate; and a semiconductor device mounted upon said circuit substrate, said circuit substrate comprising a lamination of plural resin insulation films and including, on a surface and in an interior of said circuit substrate, plural interconnection layers, one of said plural resin insulation films being formed on a first conductor pattern constituting one of said plural interconnection layers in such a manner that a bottom principal surface of said resin insulation film makes a contact with a surface of said first conductor pattern, said resin insulation film including an opening defined by a sloped surface and exposing said first conductor pattern at said bottom principal surface, a ceramic high-K dielectric film being formed at a bottom of said opening in contact with said surface of said first conductor pattern, wherein there is formed a second conductor pattern constituting one of said plural interconnection layers on said resin insulation film so as to cover said sloped surface and in contact with a surface of said ceramic high-K dielectric film.
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4. A circuit substrate comprising a lamination of plural resin insulation films and including, on a surface and in an interior of said circuit substrate, plural interconnection layers, said circuit substrate comprising:
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a first resin insulation film constituting one of said plural resin insulation films and formed over a first conductor pattern constituting one of said plural interconnection layers, in such a manner that a bottom principal surface of said first resin insulation film makes a contact with a surface of said first conductor pattern, said first resin insulation film including a first opening defined by a sloped surface, said first opening exposing said first conductor pattern at a bottom of said first opening; a lower electrode pattern formed over said first resin insulation film in contact with a surface of said first conductor pattern exposed at said bottom of said first opening, said lower electrode pattern having a shape conformal to a shape of said sloped surface of said first opening and having a depressed top surface corresponding to said first opening; a second resin insulation film constituting one of said plural resin insulation films and formed over said first resin insulation film so as to cover said lower electrode pattern, said second resin insulation film including a second opening formed in correspondence to said first opening and exposing said lower electrode pattern, a ceramic high-K dielectric film formed in said second opening on said depressed top surface of said lower electrode pattern in conformity with a shape of said depressed top surface of said lower electrode pattern, said ceramic high-K dielectric film having a depressed top surface conformal to a shape of said depressed top surface of said lower electrode pattern, wherein there is provided a second conductor pattern constituting one of said plural interconnection layers on said second resin insulation film such that said second conductor pattern makes a contact with said depressed top surface of said ceramic high-K dielectric film at said second opening. - View Dependent Claims (5)
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6. An electronic apparatus, comprising a circuit substrate and a semiconductor device mounted upon said circuit substrate, said circuit substrate comprising a lamination of plural resin insulation films and including, on a surface and in an interior of said circuit substrate, plural interconnection layers, said circuit substrate comprising:
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a first resin insulation film constituting one of said plural resin insulation films and formed over a first conductor pattern constituting one of said plural interconnection layers, in such a manner that a bottom principal surface of said first resin insulation film makes a contact with a surface of said first conductor pattern, said first resin insulation film including a first opening defined by a sloped surface, said first opening exposing said first conductor pattern at a bottom of said first opening; a lower electrode pattern formed over said first resin insulation film in contact with a surface of said first conductor pattern exposed at said bottom of said first opening, said lower electrode pattern having a shape conformal to a shape of said sloped surface of said first opening and having a depressed top surface corresponding to said first opening; a second resin insulation film constituting one of said plural resin insulation films and formed over said first resin insulation film so as to cover said lower electrode pattern, said second resin insulation film including a second opening formed in correspondence to said first opening and exposing said lower electrode pattern, a ceramic high-K dielectric film formed in said second opening on said depressed top surface of said lower electrode pattern in conformity with a shape of said depressed top surface of said lower electrode pattern, said ceramic high-K dielectric film having a depressed top surface conformal to a shape of said depressed top surface of said lower electrode pattern, wherein there is provided a second conductor pattern constituting one of said plural interconnection layers on said second resin insulation film such that said second conductor pattern makes a contact with said depressed top surface of said ceramic high-K dielectric film at said second opening.
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7. A method of producing a circuit substrate in the form of lamination of plural resin insulation films such that plural interconnection layers are formed on a surface and in an interior of said circuit substrate,
one of said plural resin insulation films being formed on a first conductor pattern constituting one of said plural interconnection layers in such a manner that a principal surface of said insulation film makes a contact with a surface of said first conductor pattern, said method comprising the steps of: -
forming an opening in said insulation film by a laser beam processing such that said first conductor pattern is exposed; forming a ceramic high-K dielectric film at a bottom of said opening in contact with said first conductor pattern selectively by an aerosol deposition process; and forming a second conductor pattern on said insulation film in contact with said high-K dielectric ceramic film in said opening.
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8. A method of producing a circuit substrate in the form of lamination of plural resin insulation films such that plural interconnection layers are formed on a surface and in an interior of said circuit substrate, comprising the steps of:
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forming a first insulation film constituting one of said plural resin insulation films on a first conductor pattern constituting one of said plural interconnection layers, such that a bottom principal surface of said first insulation film makes a contact with a surface of said first conductor pattern; forming a first opening in said first insulation film by a laser beam processing such that said first opening exposes said conductor pattern; forming a lower electrode pattern on said first insulation film so as to cover a sidewall surface of said first opening and make contact with said first conductor pattern at a bottom of said opening; forming a second insulation film constituting one of said plural resin insulation films over said first insulation film so as to cover said lower electrode pattern; forming a second opening in said second insulation film in correspondence to said first opening by a laser beam processing such that said second opening exposes said lower electrode pattern; forming a ceramic high-K dialectic film on said exposed lower electrode pattern selectively by an aerosol deposition process; and forming an upper electrode pattern on said second insulation film so as to cover said ceramic high-K dielectric film at said second opening.
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Specification