Method for Producing Virtual Ge Substrates for III/V-Integration on Si(001)
First Claim
1. A method of growing relaxed germanium buffer layers on a silicon substrate, the method including a step of epitaxially growing a Ge buffer layer (20) on a misoriented Si(001) substrate by low-energy plasma-enhanced chemical vapor deposition (LEPECVD), followed by a step selected from one of a group of steps consisting of thermal annealing and patterning of the epitaxially deposited layer.
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Accused Products
Abstract
Relaxed germanium buffer layers can be grown economically on misoriented silicon wafers by low-energy plasma-enhanced chemical vapor deposition, in conjunction with thermal annealing and/or patterning, the buffer layers can serve as high-quality virtual substrates for the growth of crack-free GaAs layers suitable for high-efficiency solar cells, lasers and field effect transistors.
317 Citations
31 Claims
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1. A method of growing relaxed germanium buffer layers on a silicon substrate, the method including a step of epitaxially growing a Ge buffer layer (20) on a misoriented Si(001) substrate by low-energy plasma-enhanced chemical vapor deposition (LEPECVD), followed by a step selected from one of a group of steps consisting of thermal annealing and patterning of the epitaxially deposited layer.
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2. A method of growing relaxed germanium buffer layers on a misoriented silicon substrate, the method including the steps of:
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(a) cleaning the surface of a Si wafer (10) by a wet chemical treatment or a hydrogen plasma treatment;
(b) loading the Si wafer into a low-energy plasma-enhanced chemical vapor deposition (LEPECVD) reactor;
(c) increasing the temperature in the LEPECVD reactor to approximately 600°
C.;
(d) epitaxially growing a Ge buffer layer (20) by LEPECVD, preferably at a rate of at least 5 nm/s, until a thickness of the Ge layer is reached within the range of 0.75 to 5 μ
m, thereby relaxing the Ge layers and reducing surface roughness measured by AFM amounts to typically 1 nm rms;
(e) raising the temperature to above 700°
C., preferably to about 900°
C., for about 10 minutes either in the LEPECVD reactor or in a separate annealing oven; and
(f) loading the Si wafer into another deposition chamber; and
(g) growing a layer of GaAs (30) using a vapor deposition method. - View Dependent Claims (3, 4, 8, 9, 10)
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5. The method of growing relaxed germanium buffer layers on a misoriented silicon substrate, the method including the steps of:
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(a) cleaning the surface of a Si wafer (10) by a wet chemical treatment or a hydrogen plasma treatment;
(b) loading the Si wafer into a low-energy plasma-enhanced chemical vapor deposition (LEPECVD) reactor;
(c) increasing the temperature in the LEPECVD reactor to approximately 600°
C.;
(d) epitaxially growing a Ge buffer layer (20) by LEPECVD, preferably at a rate of at least 5 nm/s, until a thickness of the Ge layer is reached within the range of 0.75 to 5 μ
m, thereby relaxing the Ge layers and reducing surface roughness measured by AFM amounts to typically 1 nm rms;
(e) repeatedly cycling temperature between about 700°
C. and 900°
C. either in the LEPECVD reactor or in a separate annealing oven, thereby annealing the heterostructure, in order to reduce the density of threading dislocations while preserving the flatness of the Ge layer; and
(f) loading the Si wafer into another deposition chamber; and
(g) growing a layer of GaAs (30) using a vapor deposition method. - View Dependent Claims (6, 7)
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11. The method of growing relaxed germanium buffer layers on a misoriented silicon substrate, the method including the steps of:
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(a) cleaning the surface of a Si wafer by a wet chemical treatment or a hydrogen plasma treatment;
(b) loading the Si wafer into a low-energy plasma-enhanced chemical vapor deposition (LEPECVD) reactor;
(c) increasing the temperature in the LEPECVD reactor to approximately 600°
C.;
(d) epitaxially growing a Si buffer layer (12) by LEPECVD;
(e) epitaxially growing a Ge buffer layer (20) by LEPECVD, preferably at a rate of at least 5 nm/s, until a thickness of the Ge layer is reached within the range of 0.75 to 5 μ
m, thereby relaxing the Ge layers and reducing surface roughness measured by AFM amounts to typically 1 nm rms; and
(f) annealing the heterostructure by raising the temperature to above 700°
C., preferably to about 900°
C. either in the LEPECVD reactor or in a separate annealing oven, for about 10 minutes.(g) loading the Si wafer into another deposition chamber; and
(h) growing a layer of GaAs (30) using a vapor deposition method. - View Dependent Claims (13, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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12. The method of growing relaxed germanium buffer layers on a misoriented silicon substrate, the method including the steps of:
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(a) cleaning the surface of a Si wafer by a wet chemical treatment or a hydrogen plasma treatment;
(b) loading the Si wafer into a low-energy plasma-enhanced chemical vapor deposition (LEPECVD) reactor;
(c) increasing the temperature in the LEPECVD reactor to approximately 600°
C.;
(d) epitaxially growing a Si buffer layer (12) by LEPECVD;
(e) epitaxially growing a Ge buffer layer (20) by LEPECVD, preferably at a rate of at least 5 nm/s, until a thickness of the Ge layer is reached within the range of 0.75 to 5 μ
m, thereby relaxing the Ge layers and reducing surface roughness measured by AFM amounts to typically 1 nm rms; and
(f) repeatedly cycling temperature between about 700°
C. and 900°
C. either in the LEPECVD reactor or in a separate annealing oven, thereby annealing the heterostructure, in order to reduce the density of threading dislocations while preserving the flatness of the Ge layer; and
(g) loading the Si wafer into another deposition chamber; and
(h) growing a layer of GaAs (30) using a vapor deposition method. - View Dependent Claims (14)
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- 29. A III/V semiconductor made according to any of the above methods, wherein the epitaxial growth method used is LEPECVD.
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31. A semiconductor product made from any of the above methods.
Specification