Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device having a high dielectric constant insulating film in a gate section, comprising:
- a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer, the film being formed on the high dielectric constant insulating film;
an insulating film formed on the diffusion barrier film; and
a gate electrode formed on the insulating film.
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Accused Products
Abstract
A semiconductor device capable of suppressing a threshold shift and a manufacturing method of the semiconductor device. On a high dielectric constant insulating film, a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer is formed. Therefore, the diffusion of the metal elements from the high dielectric constant insulating film to the upper layer can be prevented. As a result, a reaction and bonding between the metal elements and a Si element in a gate electrode can be suppressed near a boundary between an insulating film and the gate electrode.
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Citations
14 Claims
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1. A semiconductor device having a high dielectric constant insulating film in a gate section, comprising:
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a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer, the film being formed on the high dielectric constant insulating film; an insulating film formed on the diffusion barrier film; and a gate electrode formed on the insulating film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A manufacturing method of a semiconductor device having a high dielectric constant insulating film in a gate section, comprising the steps of:
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forming on the high dielectric constant insulating film a diffusion barrier film for preventing the diffusion of metal elements from the high dielectric constant insulating film to an upper layer; forming an insulating film on the diffusion barrier film; and forming a gate electrode on the insulating film. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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Specification