METHOD TO IMPROVE THE STEP COVERAGE AND PATTERN LOADING FOR DIELECTRIC FILMS
First Claim
1. A method of controlling the step coverage and pattern loading of a layer on a substrate, comprising:
- placing a substrate with at least one formed feature across a surface of the substrate into a chamber;
depositing a dielectric layer on the substrate; and
etching the dielectric layer with a plasma from oxygen or a halogen-containing gas selected from the group consisting of fluorine, chlorine, bromine, and combinations thereof to provide a desired profile of the dielectric layer on the at least one formed feature.
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Accused Products
Abstract
Methods of controlling the step coverage and pattern loading of a layer on a substrate are provided. The dielectric layer may be a silicon nitride, silicon oxide, or silicon oxynitride layer. The method comprises depositing a dielectric layer on a substrate having at least one formed feature across a surface of the substrate and etching the dielectric layer with a plasma from oxygen or a halogen-containing gas to provide a desired profile of the dielectric layer on the at least one formed feature. The deposition of the dielectric layer and the etching of the dielectric layer may be repeated for multiple cycles to provide the desired profile of the dielectric layer.
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Citations
20 Claims
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1. A method of controlling the step coverage and pattern loading of a layer on a substrate, comprising:
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placing a substrate with at least one formed feature across a surface of the substrate into a chamber; depositing a dielectric layer on the substrate; and etching the dielectric layer with a plasma from oxygen or a halogen-containing gas selected from the group consisting of fluorine, chlorine, bromine, and combinations thereof to provide a desired profile of the dielectric layer on the at least one formed feature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of controlling the step coverage and pattern loading of a layer on a substrate, comprising:
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placing a substrate with at least one formed feature across a surface of the substrate into a chamber, wherein the feature comprises a top surface, a sidewall surface, and a bottom surface; depositing a dielectric layer on the substrate, wherein the dielectric layer is deposited to a greater thickness on the top surface than on the bottom surface and sidewall surface; etching the dielectric layer with a plasma from oxygen or a halogen-containing gas selected from the group consisting of fluorine, chlorine, bromine, and combinations thereof at a higher etch rate on the top surface than on the sidewall surface and bottom surface; and repeating the depositing a dielectric layer and the etching the dielectric layer with a plasma to provide a desired profile of the dielectric layer on the at least one formed feature. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method of controlling the step coverage and pattern loading of a layer on a substrate, comprising:
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placing a substrate with at least one formed feature across a surface of the substrate into a chamber, wherein the feature comprises a top surface, a sidewall surface, and a bottom surface; depositing a silicon nitride dielectric layer on the substrate wherein the silicon nitride dielectric layer is deposited to a greater thickness on the top surface than on the bottom surface and sidewall surface; and etching the silicon nitride dielectric layer with a NF3 plasma at a higher etch rate on the top surface than on the sidewall surface and bottom surface to provide a desired profile of the silicon nitride dielectric layer on the at least one formed feature. - View Dependent Claims (18, 19, 20)
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Specification