METHOD TO IMPROVE THE STEP COVERAGE AND PATTERN LOADING FOR DIELECTRIC FILMS
First Claim
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1. A method of forming a layer on a patterned substrate in a chamber, comprising:
- exposing the patterned substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer on the patterned substrate;
treating the layer after it is deposited with a plasma from an oxygen-containing gas; and
repeating the exposing and treating until a desired thickness of the layer is obtained.
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Abstract
A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.
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Citations
20 Claims
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1. A method of forming a layer on a patterned substrate in a chamber, comprising:
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exposing the patterned substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer on the patterned substrate; treating the layer after it is deposited with a plasma from an oxygen-containing gas; and repeating the exposing and treating until a desired thickness of the layer is obtained. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a layer on a patterned substrate in a chamber, comprising:
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exposing the patterned substrate to octamethylcyclotetrasiloxane in the presence of a plasma to deposit a layer on the patterned substrate; treating the layer after it is deposited with a plasma from oxygen gas; and repeating the exposing and treating until a desired thickness of the layer is obtained. - View Dependent Claims (15, 16)
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17. A method of forming a layer on a patterned substrate in a chamber, comprising:
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exposing the patterned substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer on the patterned substrate; treating the layer after it is deposited with a plasma from a nitrogen-containing gas; and repeating the exposing and treating until a desired thickness of the layer is obtained. - View Dependent Claims (18, 19, 20)
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Specification