RF transceiver switching system
First Claim
1. A transceiver module comprising:
- an antenna node;
a transmit path electrically connected to the antenna node, the transmit path comprising a power amplifier;
a receive path electrically coupled to the antenna node, the receive path comprising a low noise amplifier; and
at least one switchable impedance comprising a switch electrically coupled to the transmit path and the receive path, wherein the switchable impedance is configured to switch between a first state that substantially reflects power in the transmit path from the antenna node and a second state that substantially reflects power in the receive path from the antenna node and wherein the switch is a silicon based shunt switch coupled to ground and is selected from the group consisting of a silicon-based MOS switch, a silicon-based bipolar switch and a silicon-based diode and wherein the transceiver module is formed on a single, unitary substrate.
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Accused Products
Abstract
The present invention relates to transceiver systems and methods which employ shunt switches during transmit and receive operating modes. The shunt switches may be configured with various reactive networks to achieve high or low impedance states at power amplifiers or low noise amplifiers in order to reflect or transmit power along a given path. The shunt switches are designed for protection against excessive voltage swings that would otherwise damage components in the transceiver switching circuit. The switching circuits may be implemented in a single chip architecture, which results in manufacturing efficiencies, lower cost and higher reliability circuits. Single or multi band devices may also be employed.
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Citations
32 Claims
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1. A transceiver module comprising:
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an antenna node;
a transmit path electrically connected to the antenna node, the transmit path comprising a power amplifier;
a receive path electrically coupled to the antenna node, the receive path comprising a low noise amplifier; and
at least one switchable impedance comprising a switch electrically coupled to the transmit path and the receive path, wherein the switchable impedance is configured to switch between a first state that substantially reflects power in the transmit path from the antenna node and a second state that substantially reflects power in the receive path from the antenna node and wherein the switch is a silicon based shunt switch coupled to ground and is selected from the group consisting of a silicon-based MOS switch, a silicon-based bipolar switch and a silicon-based diode and wherein the transceiver module is formed on a single, unitary substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A transceiver module comprising:
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an antenna node;
a transmit path electrically connected to the antenna node, the transmit path comprising a power amplifier;
a receive path electrically coupled to the antenna node, the receive path comprising a low noise amplifier;
at least one switchable impedance means comprising switch means electrically coupled to the transmit path and the receive path, wherein the switchable impedance means is configured to switch between a first state that substantially reflects power in the transmit path from the antenna node and a second state that substantially reflects power in the receive path from the antenna node, and wherein the transceiver module is formed on a single, unitary substrate. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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31. A transceiver module comprising:
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an antenna node;
a frequency multiplexer coupled to the antenna node; and
a plurality of transceivers each coupled to the antenna node via the frequency multiplexer wherein each transceiver is configured to operate at a separate frequency and wherein each transceiver comprises;
a transmit path electrically connected to the antenna node, the transmit path comprising a power amplifier and at least one switchable impedance; and
a receive path electrically coupled to the antenna node, the receive path comprising a low noise amplifier and at least one switchable impedance;
wherein each switchable impedance is configured to switch between a first state that substantially reflects power back toward the antenna node and a second state in which signal power is transmitted along its respective path and comprising a switch, wherein the switch is a silicon based shunt switch coupled to ground and is selected from the group consisting of a silicon-based MOS switch, a silicon-based bipolar switch and a silicon-based diode and wherein the transceiver module is formed on a single, unitary substrate.
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32. A transceiver module comprising:
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an antenna node;
a transmit path electrically connected to the antenna node, the transmit path comprising a power amplifier, a transformer coupled to the power amplifier, and a switchable impedance coupled to the transformer, wherein the switchable impedance is in a high impedance state in a first mode of operation that is a receive mode and is in a low impedance state in a second mode that is a transmit mode; and
a receive path electrically coupled to the antenna node, the receive path comprising a low noise amplifier and a switchable impedance that is in a high impedance state in the receive mode and a low impedance state in the transmit mode;
each switchable impedance comprising a silicon based shunt switch coupled to ground and is selected from the group consisting of a silicon-based MOS switch, a silicon-based bipolar switch and a silicon-based diode and wherein the transceiver module is formed on a single, unitary substrate.
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Specification