METHOD AND APPARATUS FOR REDUCING CARBON MONOXIDE POISONING AT THE PERIPHERAL EDGE OF A SUBSTRATE IN A THIN FILM DEPOSITION SYSTEM

• US 20070234955A1
• Filed: 03/29/2006
• Published: 10/11/2007
• Est. Priority Date: 03/29/2006
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Gomi, Atsushi, Suzuki, Kenji, Hara, Masamichi, Mizusawa, Yasushi
• Application Number:
  US11/277,922
• Publication Number:
  US 20070234955A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/4402 Reduction of impurities in the source gas
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas

Abstract

A method and apparatus is described for reducing CO poisoning of a thin metal film formed on a substrate using a metal carbonyl precursor. The thin metal film is formed on the substrate resting on a substrate holder in a thin film deposition system. The substrate holder comprises a shield ring positioned on a peripheral edge of the substrate holder and configured to surround the peripheral edge of the substrate, whereby the shield ring reduces the production of CO by-products at the peripheral edge of the substrate.

Claims

1. A deposition system for forming a thin film on a substrate, comprising:

a process chamber having a pumping system configured to evacuate said process chamber;

a substrate holder coupled to said process chamber and configured to support said substrate and heat said substrate;

a shield ring coupled to said substrate holder and configured to surround said substrate and reduce CO poisoning of said substrate;

a metal precursor vaporization system configured to vaporize a metal carbonyl precursor to form a metal carbonyl precursor vapor;

a vapor distribution system coupled to or within said process chamber and configured to introduce said metal carbonyl precursor vapor to a process space above said substrate;

a vapor delivery system having a first end coupled to an outlet of said metal precursor vaporization system and a second end coupled to an inlet of said vapor distribution system; and

a gas supply system coupled to at least one of said film precursor vaporization system or said vapor delivery system, or both, and configured to supply a CO gas to transport said metal carbonyl precursor vapor in said CO gas to said inlet of said vapor distribution system.

2. The deposition system according to claim 1, further comprising:

a dilution gas source coupled to said vapor distribution system or said process chamber, or both, and configured to supply a dilution gas to said metal carbonyl precursor vapor and said CO gas.

3. The deposition system according to claim 2, wherein said dilution gas comprises an inert gas.

4. The deposition system according to claim 2, wherein said vapor distribution system is configured to adjust a distribution of said dilution gas above said substrate.

5. The deposition system according to claim 1, wherein the substrate holder is configured to heat the substrate to a substrate temperature between about 50°

C. and about 500°

C.

6. The deposition system according to claim 1, wherein said shield ring extends radially from a peripheral edge of said substrate to a peripheral edge of said substrate holder.

7. The deposition system according to claim 6, wherein said shield ring extends at least partially along a side of said substrate holder.

8. The deposition system according to claim 1, wherein said shield ring comprises at least one of anodized aluminum, alumina, aluminum nitride, sapphire, quartz, silicon, silicon nitride, silicon carbide, carbon, TEFLON®

, or KAPTON®

.

9. The deposition system according to claim 1, wherein said shield ring comprises a protective coating.

10. The deposition system according to claim 1, further comprising a thermal insulator disposed between said shield ring and said substrate holder.

11. The deposition system according to claim 1, wherein said metal carbonyl precursor comprises W(CO)₆, Ni(CO)₄, Mo(CO)₆, Co₂(CO)₈, Rh₄(CO)₁₂, Re₂(CO)₁₀, Cr(CO)₆, Ru₃(CO)₁₂, or Os₃(CO)₁₂, or a combination of two or more thereof.

12. The deposition system according to claim 1, wherein said gas supply system is further configured to supply an inert carrier gas to transport said metal carbonyl precursor vapor.

13. The deposition system according to claim 2, wherein said vapor distribution system comprises:

a housing having said inlet formed therein; and

a vapor distribution plate coupled to said housing and configured to face said substrate, wherein the combination of said housing and said vapor distribution plate form a plenum configured to receive said CO gas and said metal precursor vapor from said vapor delivery system through said inlet formed in said housing, wherein said vapor distribution system is configured to receive said dilution gas into said plenum, and wherein said vapor distribution plate comprises a plurality of openings formed therein and configured to distribute said dilution gas with said CO gas and said metal precursor vapor to said process space above said substrate.

14. The deposition system according to claim 13, further comprising:

a partition positioned within said plenum and configured to separate said plenum into a peripheral plenum region and a central plenum region, wherein said vapor distribution system is configured to receive said dilution gas into said peripheral plenum region, whereby said dilution gas is introduced with said CO gas and said metal precursor vapor to a substantially peripheral region of said process space through said openings in said vapor distribution plate.

15. The deposition system according to claim 2, wherein said vapor distribution system comprises:

a housing having said inlet formed therein;

a vapor distribution plate coupled to said housing and configured to face said substrate, and

an intermediate vapor distribution plate positioned within said housing between said inlet and said vapor distribution plate, wherein the combination of said housing, said intermediate vapor distribution plate and said vapor distribution plate form a plenum between said inlet and said intermediate vapor distribution plate and an intermediate plenum between said intermediate vapor distribution plate and said vapor distribution plate,

wherein said vapor distribution system is configured to receive said CO gas and said metal precursor vapor into said plenum through said inlet formed in said housing,

wherein said intermediate vapor distribution plate includes a first array of openings formed therein and configured to distribute said CO gas and said metal precursor vapor from said plenum to said intermediate plenum,

wherein said dilution gas source is configured to supply said dilution gas to said intermediate plenum for diluting said CO gas and said metal precursor vapor, and

wherein said vapor distribution plate includes a second array of openings formed therein and configured to re-distribute said CO gas and said metal precursor vapor with said dilution gas to said process space above said substrate.

16. The deposition system according to claim 15, further comprising:

a partition positioned within said intermediate plenum and configured to separate said intermediate plenum into a peripheral plenum region and a central plenum region, wherein said vapor distribution system is configured to receive said dilution gas into said peripheral plenum region, whereby said CO gas and said metal precursor vapor with said dilution gas are re-distributed to a substantially peripheral region of said process space through said openings in said vapor distribution plate.

17. The deposition system according to claim 2, wherein said vapor distribution system comprises:

a housing having said inlet formed therein; and

a vapor distribution plate coupled to said housing and configured to face said substrate, wherein the combination of said housing and said vapor distribution plate form a plenum configured to receive said CO gas and said metal precursor vapor from said vapor delivery system through said inlet formed in said housing, and wherein said vapor distribution plate comprises a plurality of through-holes formed therein and configured to distribute said CO gas and said metal precursor vapor to said process space above said substrate,

wherein said vapor distribution plate comprises a first intermediate plenum formed in a first region thereof and a first array of orifices fluidicly coupling said first intermediate plenum to a first process region in said process space, and

wherein said vapor distribution system is configured to receive said dilution gas into said first intermediate plenum at a first flow rate and to distribute said dilution gas to said first process region through said first array of orifices for diluting said CO gas and said metal precursor vapor to a first concentration in said first process region.

18. The deposition system according to claim 17, wherein said first process region of said process space comprises a substantially peripheral region of said process space above said substrate.

19. The deposition system according to claim 17, wherein said vapor distribution plate further comprises a second intermediate plenum formed in a second region thereof and a second array of orifices fluidicly coupling said second intermediate plenum to a second process region in said process space, and wherein said vapor distribution system is configured to receive said dilution gas into said second intermediate plenum at a second flow rate and to distribute said dilution gas to said second process region through said second array of orifices for diluting said CO gas and said metal precursor vapor to a second concentration in said second process region.

20. The deposition system according to claim 19, wherein said first process region of said process space comprises a substantially peripheral region of said process space above said substrate, and said second process region of said process space comprises a substantially central region of said process space above said substrate.

21. A method of depositing a metal layer on a substrate, the method comprising:

providing a substrate on a substrate holder in a process chamber of a deposition system;

providing a shield ring on said substrate holder surrounding a periphery of said substrate in order to reduce CO poisoning of said substrate;

elevating the temperature of said substrate holder to heat said substrate;

forming a process gas containing a metal carbonyl precursor vapor and a CO gas;

introducing said process gas into said process chamber; and

exposing said substrate to said process gas to deposit a metal layer on said substrate by a vapor deposition process.