Reactive sputtering chamber with gas distribution tubes

• US 20070235320A1
• Filed: 04/06/2006
• Published: 10/11/2007
• Est. Priority Date: 04/06/2006
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Yan, White, John, Hosokawa, Akihiro
• Application Number:
  US11/399,233
• Publication Number:
  US 20070235320A1
• Time in Patent Office: Days
• US Class Current: 204/192.100
• CPC Class Codes: C23C 14/0063 characterised by means for introducing or removing gases
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/34 operating with cathodic sputtering H01J37/36 takes precedence ; methods of cathodic sputtering C23C14/34

Abstract

A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.

Claims

1. A sputtering apparatus for processing a substrate, comprising:

a vacuum chamber;

a sputtering target mounted in the vacuum chamber;

a pedestal positioned in the vacuum chamber to support the substrate; and

a plurality of gas introduction tubes extending across said vacuum chamber in an area between said target and said pedestal wherein no collimator is present between said target and said pedestal.

2. The sputtering apparatus as claimed in claim 1, wherein each said tube comprises:

at least one inner tube comprising a plurality of openings; and

an outer tube comprising a plurality of openings, said outer tube surrounding said at least one inner tube;

wherein said openings of said outer tube do not line up with said openings of said at least one inner tube.

3. The sputtering apparatus as claimed in claim 1, wherein each said tube is grounded.

4. The sputtering apparatus as claimed in claim 1, wherein each said tube is biased.

5. The sputtering apparatus as claimed in claim 1, wherein each said tube is spaced greater than about 30 mm from said pedestal and greater than about 30 mm from said target.

6. A sputtering apparatus for processing a substrate, comprising:

a vacuum chamber;

a sputtering target;

a pedestal positioned in the vacuum chamber to support the substrate; and

one or more gas introduction tubes extending across said vacuum chamber in an area between said target and said pedestal, each said tube comprising;

at least one inner tube comprising a plurality of openings; and

an outer tube comprising a plurality of openings, said outer tube surrounding said at least one inner tube.

7. The sputtering apparatus as claimed in claim 6, wherein each said gas introduction tube is grounded.

8. The sputtering apparatus as claimed in claim 6, wherein each said gas introduction tube is biased.

9. The sputtering apparatus as claimed in claim 6, wherein each said gas introduction tube is spaced greater than about 30 mm from said pedestal and greater than about 30 mm from said target.

10. The sputtering apparatus as claimed in claim 6, wherein said openings of said outer tube do not line up with said openings of said at least one inner tube.

11. A method of sputtering a sputtering target in a sputtering apparatus that comprises a vacuum chamber, a sputtering target, and a plurality of gas introduction tubes extending across said vacuum chamber in an area between said target and said substrate wherein no collimator is present between said target and said substrate, said method comprising:

sputtering said target to deposit a layer on a substrate while providing gas from said tubes.

12. The method as claimed in claim 11, wherein each said tube comprises:

at least one inner tube comprising a plurality of openings; and

an outer tube comprising a plurality of openings, said outer tube surrounding said at least one inner tube;

wherein said openings of said outer tube do not line up with said openings of said at least one inner tube.

13. The method as claimed in claim 11, wherein each said tube is grounded.

14. The method as claimed in claim 11, wherein each said tube is biased.

15. The method as claimed in claim 11, wherein each said tube is spaced greater than about 30 mm from said substrate and greater than about 30 mm from said target.

16. A method of sputtering a sputtering target in a sputtering apparatus that comprises a vacuum chamber, a sputtering target, and one or more gas introduction tubes extending across said vacuum chamber in an area between said target and said substrate, each said tube comprises at least one inner tube comprising a plurality of openings and an outer tube comprising a plurality of openings, said outer tube surrounding said at least one inner tube, said method comprising:

sputtering said target to deposit a layer on a substrate while providing gas from said one or more gas introduction tubes.

17. The method as claimed in claim 16, wherein each said gas introduction tube is grounded.

18. The method as claimed in claim 16, wherein each said gas introduction tube is biased.

19. The method as claimed in claim 16, wherein each said gas introduction tube is spaced greater than about 30 mm from said substrate and greater than about 30 mm from said target.

20. The method as claimed in claim 16, wherein said openings of said outer tube do not line up with said openings of said at least one inner tube.

21. A gas introduction tube comprising:

at least one inner tube comprising a plurality of openings; and

an outer tube comprising a plurality of openings, said outer tube surrounding said at least one inner tube.

22. The gas introduction tube as claimed in claim 21, wherein said openings of said outer tube do not line up with said openings of said at least one inner tube.

23. The gas introduction tube as claimed in claim 21, wherein said tube is grounded.

24. The gas introduction tube as claimed in claim 21, wherein said tube is biased.