Capacitor structure of semiconductor device and method of fabricating the same

• US 20070235790A1
• Filed: 04/04/2007
• Published: 10/11/2007
• Est. Priority Date: 04/05/2006
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Yoon-Hae, Lee, Seung-Koo
• Granted Patent: US 7,538,375 B2
• Time in Patent Office: Days
• US Class Current: 257/306
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05073 Single internal layer
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05187 Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05188
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48724 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48824 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/91 : made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01055 : Cesium [Cs]
• CPC Class Codes: H01L 2924/01056 : Barium [Ba]
• CPC Class Codes: H01L 2924/01059 : Praseodymium [Pr]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/12036 : PN diode
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A semiconductor device having superior capacitance may include interconnections formed on a semiconductor substrate, an interlayer insulation layer on the interconnections and having vias exposing a portion of the top surface of the interconnections, a capacitor which may be on the interlayer insulation layer and having a bottom electrode, a dielectric layer pattern, and a top electrode which may be sequentially stacked, and a pad structure may be connected to the interconnections through the vias. The pad structure may include pads for bonding with external electronic devices and a first upper interconnection connected to the top electrode of the capacitor.

Claims

1. A method of fabricating a capacitor structure of a semiconductor device, comprising:

forming an interlayer insulation layer on a semiconductor substrate;

forming a capacitor on the interlayer insulation layer, the capacitor including a bottom electrode, a dielectric layer pattern, and a top electrode;

forming a pad metal layer on the interlayer insulation layer to cover the capacitor; and

patterning the pad metal layer to form pads for bonding with external electronic devices and to form first and second upper interconnections connected to the top electrode and the bottom electrode, respectively.

2. The method as claimed in claim 1, wherein forming the capacitor comprises:

forming a bottom electrode layer on the interlayer insulation layer;

patterning the bottom electrode layer to form the bottom electrode;

sequentially forming a dielectric layer and a top electrode layer on the resulting structure having the bottom electrode; and

patterning the dielectric layer and the top electrode layer to form the dielectric layer pattern and the top electrode which are sequentially stacked,

wherein the dielectric layer pattern and the top electrode are formed to expose a portion of a top surface of the bottom electrode.

3. The method as claimed in claim 2, wherein the dielectric layer pattern and the top electrode are formed to extend from a top surface of the bottom electrode to cover a top surface of the interlayer insulation layer in a region adjacent to the first upper interconnection, and the dielectric layer pattern and the top electrode are patterned to expose the top surface of the bottom electrode in a region adjacent to the second upper interconnection;

and

the second upper interconnection is connected to the top surface of the exposed bottom electrode.

4. The method as claimed in claim 1, further comprising:

before the forming of the interlayer insulation layer, forming interconnections on the semiconductor substrate;

after the forming of the pads and the first and second upper interconnections, forming a protective layer pattern on the pads and the first and second upper interconnections, the protective layer pattern having openings exposing top surfaces of the pads; and

bonding metal wires to the top surfaces of the pads exposed through the openings.

5. The method as claimed in claim 1, wherein height, thickness and material of the first and second upper interconnections are substantially identical to those of the pads.

6. The method as claimed in claim 4, wherein the top surfaces of the pads and the bottom electrode of the capacitor are formed to be electrically connected to the interconnections through the first and second upper interconnections, which are connected to top surfaces of the top and bottom electrodes, respectively.

7. The method as claimed in claim 4, wherein the protective layer pattern is formed of at least one of a silicon oxide layer, a silicon nitride layer, or a polyimide layer, and includes at least one polyimide layer.

8. The method as claimed in claim 4, further comprising:

before the forming of the capacitor, patterning the interlayer insulation layer to form vias and at least one mold opening, the vias penetrating the interlayer insulation layer to expose top surfaces of the interconnections, the mold opening penetrating the interlayer insulation layer,

wherein the mold opening is formed on a region where the capacitor is formed, and the pad metal layer is connected to the interconnections through the vias.

9. The method as claimed in claim 8, wherein:

the bottom electrode, the dielectric layer pattern, and the top electrode are formed to expose the vias and a top surface of the interlayer insulation layer around the vias, and the bottom electrode, the dielectric layer pattern, and the top electrode conform to and cover the mold opening.

10. The method as claimed in claim 4, further comprising:

after the forming of the capacitor, patterning the interlayer insulation layer to form vias exposing the top surfaces of the interconnections,

wherein the pad metal layer is connected to the interconnections through the vias.

11. The method as claimed in claim 8, wherein patterning the metal layer comprises:

forming the first upper interconnection and the second upper interconnection such that the first upper interconnection covers a top surface of the top electrode of the capacitor, and the first upper interconnection is connected to one of the interconnections through at least one of the vias, and the second upper interconnection is connected to a top surface of the bottom electrode of the capacitor and to another one of the interconnections through at least one of the vias.

12. The method as claimed in claim 1, further comprising:

locating the pad and the first and second upper interconnections to be spaced farthest from the semiconductor substrate among conductive structures constituting the semiconductor device; and

locating the capacitor to be spaced farthest from the semiconductor substrate among conductive structure constituting the semiconductor device except for the pad and the first and second upper interconnections.

13. A method of fabricating a capacitor structure of a semiconductor device, comprising:

forming interconnections on a semiconductor substrate;

forming an interlayer insulation layer having a mold opening and vias to expose a portion of a top surface of the interconnections;

forming a capacitor on the mold opening and forming the interlayer insulation layer around the mold opening, the capacitor including a sequentially stacked bottom electrode, a dielectric layer pattern, and a top electrode;

forming a pad metal layer covering the capacitor and filling the vias;

patterning the pad metal layer to simultaneously form pads for bonding with external electronic devices and form an upper interconnection connected to a top electrode of the capacitor; and

connecting the bottom electrode to the interconnection below the bottom electrode through the mold opening.

14. The method as claimed in claim 13, further comprising:

locating the pads and the upper interconnection to be farthest from the semiconductor device among conductive structures constituting the semiconductor device; and

locating the capacitor to be farthest from the semiconductor device among conductive structures constituting the semiconductor device except for the pad and the upper interconnection.

15. A semiconductor device, comprising:

interconnections on a semiconductor substrate;

an interlayer insulation layer on the interconnections, the interlayer insulation layer having vias exposing a portion of a top surface of the interconnections;

a capacitor on the interlayer insulation layer, the capacitor having a bottom electrode, a dielectric layer pattern, and a top electrode; and

a pad structure connected to the interconnections through the vias,

wherein the pad structure includes pads for bonding with external electronic devices and a first upper interconnection connected to the top electrode of the capacitor.

16. The semiconductor device as claimed in claim 15, wherein the pad structure further comprises a second upper interconnection spaced apart from the first upper interconnection and connected to a top surface of the bottom electrode of the capacitor.

17. The semiconductor device as claimed in claim 16, wherein the dielectric layer pattern and the top electrode extend from a top of the bottom electrode to cover the top surface of the interlayer insulation layer in a region adjacent to the first upper interconnection and expose the top surface of the bottom electrode in a region adjacent to the second upper interconnection, and

wherein the second upper interconnection is connected to the top surface of the exposed bottom electrode.

18. The semiconductor device as claimed in claim 16, further comprising:

a mold opening in the interlayer insulation layer,

wherein the bottom electrode, the dielectric layer pattern, and the top electrode of the capacitor conform to and sequentially cover an inner surface of the mold opening.

19. The semiconductor device as claimed in claim 18, wherein the mold opening exposes a top surface of at least one of the interconnections, and the bottom electrode of the capacitor is connected to the exposed interconnection below the bottom electrode through the mold opening.

20. The semiconductor device as claimed in claim 15, further comprising:

a protective layer pattern on the pad structure and having openings selectively exposing the top surfaces of the pads,

wherein the protective layer pattern includes at least one polyimide layer.

21. The semiconductor device as claimed in claim 15, wherein the pad structure is a conductive structure farthest from the semiconductor substrate among conductive structures constituting the semiconductor device;

and

the capacitor is a conductive structure that is farthest from the semiconductor substrate among conductive structures constituting the semiconductor device except for the pad structure.