SEMICONDUCTOR DEVICE STRUCTURE AND METHOD THEREFOR

• US 20070235807A1
• Filed: 05/01/2007
• Published: 10/11/2007
• Est. Priority Date: 10/29/2004
• Status: Active Grant

• Current Assignee: North Star Innovations Inc. (Wi-LAN Inc.)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: Thean, Voon-Yew, Nguyen, Bich-Yen, Orlowski, Marius, Sadaka, Mariam, White, Ted, Barr, Alexander
• Granted Patent: US 7,781,840 B2
• Time in Patent Office: Days
• US Class Current: 257/351
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

Two different transistors types are made on different crystal orientations in which both are formed on SOI. A substrate has an underlying semiconductor layer of one of the crystal orientations and an overlying layer of the other crystal orientation. The underlying layer has a portion exposed on which is epitaxially grown an oxygen-doped semiconductor layer that maintains the crystalline structure of the underlying semiconductor layer. A semiconductor layer is then epitaxially grown on the oxygen-doped semiconductor layer. An oxidation step at elevated temperatures causes the oxide-doped region to separate into oxide and semiconductor regions. The oxide region is then used as an insulation layer in an SOI structure and the overlying semiconductor layer that is left is of the same crystal orientation as the underlying semiconductor layer. Transistors of the different types are formed on the different resulting crystal orientations.

Claims

1-24. -24. (canceled)

25. A semiconductor device comprising:

a first transistor, the first transistor having a channel region in a first semiconductor layer, the first semiconductor layer located over a first insulator;

second transistor, the second transistor having a channel region in a second semiconductor layer, the second semiconductor layer is located over a second insulator layer, wherein a first crystal orientation characteristic of the first semiconductor layer is different from that of the second semiconductor layer;

a semiconductor structure, the first insulator layer located over the semiconductor structure and the second insulator layer located over the semiconductor structure.

26. The semiconductor device of claim 25 wherein the first crystal orientation characteristic includes a transistor channel direction.

27. The semiconductor device of claim 25 wherein the first crystal orientation characteristic includes a surface crystal orientation.

28. The semiconductor device of claim 25 wherein a crystal orientation of the second semiconductor layer is not different from that of the semiconductor structure.

29. The semiconductor device of claim 25 wherein the semiconductor structure is characterized as a substrate.

30. The semiconductor device of claim 25 wherein the first insulator layer is located on the semiconductor structure, the semiconductor device further comprises a third semiconductor layer located between the semiconductor structure and the second insulator layer.

31. The semiconductor device of claim 25 wherein the first semiconductor layer has a different material composition than that of the second semiconductor layer.

32. A semiconductor device comprising:

a first transistor, the first transistor having a channel region in a first semiconductor layer, the first semiconductor layer located over a first insulator;

second transistor, the second transistor having a channel region in a second semiconductor layer, the second semiconductor layer is located over a second insulator layer;

a semiconductor structure, wherein the first insulator layer is located on the semiconductor structure and the second insulator layer located over the semiconductor structure;

a third semiconductor layer located between the semiconductor structure and the second insulator layer, wherein the third semiconductor layer is located in an opening of the first insulating layer.