IMPLANTABLE CO-FIRED ELECTRICAL FEEDTHROUGHS
First Claim
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1. A miniaturized hermetic electrical interconnect for an implantable medical device (IMD), comprising:
- a monolithic structure derived from at least three discrete ceramic green-state sheet layers with each said at least three ceramic green-state sheet layers having at least one via-receiving aperture coupling major planar sides thereof;
a conductive metallic material disposed within and at least partially filling each of the via-receiving apertures;
a ferrule structure surrounding the monolithic structure, said ferrule structure having an upper surface and a lower surface; and
a structural support member coupled to at least a portion of the lower surface and a lower portion of said monolithic structure, wherein said monolithic structure and said conductive metallic material are hermetically fused together at elevated temperature, wherein the coupling between said structural support member and said monolithic structure comprises a diffusion bond.
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Abstract
A hermetic interconnect for implantable medical devices is presented. In one embodiment, the hermetic interconnect includes a conductive material introduced to a via in a single layer. The conductive material includes a first end and a second end. A first bonding pad is coupled to the first end of the conductive material. A second bonding pad is coupled to the second end of the conductive material. The single layer and the conductive material undergo a co-firing process.
61 Citations
57 Claims
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1. A miniaturized hermetic electrical interconnect for an implantable medical device (IMD), comprising:
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a monolithic structure derived from at least three discrete ceramic green-state sheet layers with each said at least three ceramic green-state sheet layers having at least one via-receiving aperture coupling major planar sides thereof;
a conductive metallic material disposed within and at least partially filling each of the via-receiving apertures;
a ferrule structure surrounding the monolithic structure, said ferrule structure having an upper surface and a lower surface; and
a structural support member coupled to at least a portion of the lower surface and a lower portion of said monolithic structure, wherein said monolithic structure and said conductive metallic material are hermetically fused together at elevated temperature, wherein the coupling between said structural support member and said monolithic structure comprises a diffusion bond. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A hermetic interconnect for an IMD, comprising:
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a structure derived from at least three discrete ceramic layers with each said at least three ceramic layers having at least one via-receiving aperture coupling major planar sides thereof;
a conductive material disposed within at least one via;
a ferrule structure surrounding the structure, said ferrule structure having an upper surface and a lower surface; and
a structural support member coupled to at least a portion of the lower surface and a lower portion of said structure, wherein said structure and said conductive material are hermetically fused together. - View Dependent Claims (34)
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35. A hermetic interconnect for an IMD comprising:
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a first layer;
a second layer coupled to the first layer;
a third layer;
a first via disposed in the first layer;
a second via formed in the second layer;
a third via formed in the third layer;
a first conductive material disposed in the first via;
a second conductive material disposed in the second via;
a third conductive material in the third via;
a first conductive element coupled to the first and second conductive materials;
a second conductive element coupled to the second and third conductive elements; and
a ferrule surrounding the first, second and third layers. - View Dependent Claims (36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 55, 56)
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52. A hermetic interconnect for an IMD comprising:
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a single layer;
a conductive material coupled to the single layer, the conductive material includes a first end and a second end;
a first bonding pad coupled to the first end of the conductive material; and
a second bonding pad coupled to the second end of the conductive material, wherein the hermetic interconnect being co-fired. - View Dependent Claims (53)
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54. A hermetic interconnect for an IMD comprising:
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a first layer with a first via formed therein;
a first conductive material disposed in the first via;
a second layer with a second via formed therein;
a second conductive material disposed in the second via; and
a conductive element coupled to the first conductive material and the second conductive material, wherein the first and the second layers being co-fired. - View Dependent Claims (57)
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Specification