REWRITABLE OPTICAL RECORDING MEDIUM AND OPTICAL RECORDING METHOD
First Claim
1. A rewritable optical recording medium comprising:
- a substrate having a guide groove formed thereon;
a phase-change type recording layer, a portion in a crystalline state of the phase-change type recording layer corresponds to an unrecorded or erased state, and a portion in an amorphous state of the phase-change type recording layer corresponds to a recorded state, so that an amorphous mark corresponding to the recorded state is formed upon irradiation with a recording laser beam;
the phase-change type recording layer contains Sb as a main component, and further contains Ge and/or Te, a content of Ge is from 1 atomic % to 30 atomic %, and a content of Te is from 10 atomic % to 30 atomic %; and
in the phase-change type recording layer, Sb/Te is at least 4.5, and the atomic ratio of Ge to Te is from 1;
3 to 1;
20.
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Accused Products
Abstract
A rewritable optical recording medium including: a substrate having a guide groove formed thereon, a phase-change type recording layer, a portion in a crystalline state of the phase-change type recording layer corresponds to an unrecorded or erased state, and a portion in an amorphous state of the phase-change type recording layer corresponds to a recorded state, so that an amorphous mark corresponding to the recorded state is formed upon irradiation with a recording laser beam. The phase-change type recording layer contains Sb as a main component, and further contains Ge and/or Te, a content of Ge is from 1 atomic % to 30 atomic %, and a content of Te is from 10 atomic % to 30 atomic %, and in the phase-change type recording layer, Sb/Te is at least 4.5, and the atomic ratio of Ge to Te is from 1:3 to 1:20.
79 Citations
57 Claims
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1. A rewritable optical recording medium comprising:
-
a substrate having a guide groove formed thereon;
a phase-change type recording layer, a portion in a crystalline state of the phase-change type recording layer corresponds to an unrecorded or erased state, and a portion in an amorphous state of the phase-change type recording layer corresponds to a recorded state, so that an amorphous mark corresponding to the recorded state is formed upon irradiation with a recording laser beam;
the phase-change type recording layer contains Sb as a main component, and further contains Ge and/or Te, a content of Ge is from 1 atomic % to 30 atomic %, and a content of Te is from 10 atomic % to 30 atomic %; and
in the phase-change type recording layer, Sb/Te is at least 4.5, and the atomic ratio of Ge to Te is from 1;
3 to 1;
20. - View Dependent Claims (2, 3, 4, 5, 6, 7, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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8. A rewritable optical recording medium comprising:
-
a substrate having a guide groove formed thereon;
a phase-change type recording layer, a portion in a crystalline state of the phase-change type recording layer corresponds to an unrecorded or erased state, and a portion in an amorphous state of the phase-change type recording layer corresponds to a recorded state, so that an amorphous mark corresponding to the recorded state is formed upon irradiation with a recording laser beam;
the phase-change type recording layer contains Sb as a main component, and further contains Ge and/or Te, a content of Te is less than 10 atomic %, and a content of Ge is from 1 atomic % to 30 atomic %; and
the phase-change type recording layer is made of an alloy having, as a main component, a composition represented by Teγ
M1β
(Geα
Sb1−
α
)1−
β
−
γ
(where 0.01≦
α
≦
0.3, 0≦
β
≦
0.3, 0≦
γ
≦
0.1, 2≦
β
/γ and
0<
β
+γ
≦
0.4, and M1 represents one element selected from the group consisting of In, Ga and Sn. - View Dependent Claims (9, 10, 11, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57)
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Specification