MASK DEFECT ANALYSIS SYSTEM

• US 20070237384A1
• Filed: 06/12/2007
• Published: 10/11/2007
• Est. Priority Date: 02/21/2002
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: BULA, Orest, CONRAD, Edward, BRUCE, James, KRUEGER, Joshua, LEIPOLD, William, HIBBS, Michael
• Granted Patent: US 7,492,940 B2
• Time in Patent Office: Days
• US Class Current: 382/144
• CPC Class Codes: G03F 1/84 Inspecting

Abstract

An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.

Claims

1. A method of evaluating the effect of defects on components in a semiconductor manufacturing process, said method comprising:

inspecting a component for a defect using an inspection tool;

storing defect inspection data from the inspection tool;

generating a shape representing the defect;

retrieving design data from a design data repository corresponding to the component being inspected;

reading a first rule from a predetermined rule set of a plurality of rules; and

determining whether to repair, accept, or scrap the component based upon the defect by applying the first rule to the generated shape.

2. The method of claim 1, wherein the first rule specifies a minimum acceptable distance between the defect and an other shape on a same design level of a mask.

3. The method of claim 1, wherein the first rule specifies a minimum acceptable distance between the defect and an other shape on a different design level of a mask.

4. The method of claim 1, further comprising:

reading a second rule from the predetermined rule set of a plurality of rules;

determining whether to repair, accept, or scrap the component based upon the defect by applying the second rule to the generated shape.

5. A method of evaluating the effect of defects on components in a semiconductor manufacturing process, said method comprising:

retrieving inspection data of a mask from a mask inspection report;

retrieving design data from a design data repository;

generating a shape representing a defect based upon the inspection data and the design data; and

applying a plurality of rules of a rule set to the generated shape to determine whether to repair, accept, or scrap the mask.

6. The method of claim 5, further comprising:

generating a plurality of shapes; and

applying the plurality of rules to the plurality of shapes.

7. The method of claim 5, wherein at least one rule of the plurality of rules specifies a minimum acceptable distance between the defect and an other shape on a same design level of the mask.

8. The method of claim 5, wherein at least one rule of the plurality of rules specifies a minimum acceptable distance between the defect and an other shape on a different design level of the mask.