METHOD OF FORMING MIXED RARE EARTH NITRIDE AND ALUMINUM NITRIDE FILMS BY ATOMIC LAYER DEPOSITION
First Claim
1. A method for forming a mixed rare earth nitride or aluminum nitride film, comprising:
- disposing a substrate in a process chamber; and
exposing the substrate to a gas pulse sequence to deposit a mixed rare earth nitride film or a mixed rare earth aluminum nitride film with a desired thickness, wherein the gas pulse sequence includes, in any order;
a) sequentially first, exposing the substrate to a gas pulse comprising a first rare earth precursor, and second, exposing the substrate to a gas pulse comprising an nitrogen-containing gas;
b) sequentially first, exposing the substrate to a gas pulse comprising a second rare earth precursor, and second, exposing the substrate to a gas pulse comprising the nitrogen-containing gas, wherein the first and second rare earth precursors contain different rare earth metal elements; and
c) optionally, sequentially first, exposing the substrate to a gas pulse containing an aluminum precursor and second, exposing the substrate to a gas pulse containing the nitrogen-containing gas, wherein each of a) b) and optionally c) are optionally repeated any number of desired times, and wherein the gas pulse sequence including a), b) and optionally c) is optionally repeated, in any order, any number of desired times to achieve the desired thickness.
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Accused Products
Abstract
A method is provided for depositing a gate dielectric that includes at least two rare earth metal elements in the form of a nitride or an aluminum nitride. The method includes disposing a substrate in a process chamber and exposing the substrate to a gas pulse containing a first rare earth precursor and to a gas pulse containing a second rare earth precursor. The substrate may also optionally be exposed to a gas pulse containing an aluminum precursor. Sequentially after each precursor gas pulse, the substrate is exposed to a gas pulse of a nitrogen-containing gas. In alternative embodiments, the first and second rare earth precursors may be pulsed together, and either or both may be pulsed together with the aluminum precursor. The first and second rare earth precursors comprise a different rare earth metal element. The sequential exposing steps may be repeated to deposit a mixed rare earth nitride or aluminum nitride layer with a desired thickness. Purge or evacuation steps may also be performed after each gas pulse.
363 Citations
25 Claims
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1. A method for forming a mixed rare earth nitride or aluminum nitride film, comprising:
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disposing a substrate in a process chamber; and
exposing the substrate to a gas pulse sequence to deposit a mixed rare earth nitride film or a mixed rare earth aluminum nitride film with a desired thickness, wherein the gas pulse sequence includes, in any order;
a) sequentially first, exposing the substrate to a gas pulse comprising a first rare earth precursor, and second, exposing the substrate to a gas pulse comprising an nitrogen-containing gas;
b) sequentially first, exposing the substrate to a gas pulse comprising a second rare earth precursor, and second, exposing the substrate to a gas pulse comprising the nitrogen-containing gas, wherein the first and second rare earth precursors contain different rare earth metal elements; and
c) optionally, sequentially first, exposing the substrate to a gas pulse containing an aluminum precursor and second, exposing the substrate to a gas pulse containing the nitrogen-containing gas, wherein each of a) b) and optionally c) are optionally repeated any number of desired times, and wherein the gas pulse sequence including a), b) and optionally c) is optionally repeated, in any order, any number of desired times to achieve the desired thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for forming a mixed rare earth nitride film, comprising:
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a) disposing a substrate in a process chamber;
b) exposing the substrate to a gas pulse comprising a plurality of rare earth precursors containing at least two different rare earth metal elements;
c) exposing the substrate to a gas pulse of an nitrogen-containing gas; and
d) repeating steps b) and c) a desired number of times to deposit a mixed rare earth nitride film with a desired thickness. - View Dependent Claims (13, 14, 15, 16)
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17. A method for forming a mixed rare earth aluminum nitride film, comprising:
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a) disposing a substrate in a process chamber;
b) sequentially first, exposing the substrate to a gas pulse comprising a plurality of rare earth precursors containing at least two different rare earth metal elements, and second, exposing the substrate to a gas pulse of an nitrogen-containing gas;
c) sequentially first, exposing the substrate to a gas pulse containing an aluminum precursor and second, exposing the substrate to a gas pulse containing an nitrogen-containing gas; and
d) repeating steps b)-c) a desired number of times to deposit a mixed rare earth aluminum nitride film with a desired thickness. - View Dependent Claims (18, 19, 20, 21)
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22. A method for forming a mixed rare earth aluminum nitride film, comprising:
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a) disposing a substrate in a process chamber;
b) exposing the substrate to a gas pulse comprising a plurality of rare earth precursors containing at least two different rare earth metal elements and containing an aluminum precursor;
c) exposing the substrate to a gas pulse of an nitrogen-containing gas;
c) repeating steps b)-c) a desired number of times to deposit a mixed rare earth aluminum nitride film with a desired thickness. - View Dependent Claims (23, 24, 25)
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Specification