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Dynamic metrology sampling with wafer uniformity control

  • US 20070238201A1
  • Filed: 03/28/2006
  • Published: 10/11/2007
  • Est. Priority Date: 03/28/2006
  • Status: Abandoned Application
First Claim
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1. A method of processing a wafer comprising:

  • receiving a wafer, wherein the wafer comprises a plurality of dies, each die having a patterned hard mask layer on top of at least one other layer;

    determining metrology data for the wafer, wherein the metrology data includes critical dimension (CD) data for at least one hard mask feature on the wafer and data for the at least one other layer, the metrology data being determined using historical data, or measured data or a combination thereof for a first number of measurement sites on the wafer;

    creating a pre-processing measurement map for the wafer using the metrology data;

    calculating a first pre-processing prediction map for the wafer, the first pre-processing prediction map including a first set of predicted measured data for a first set of dies on the wafer;

    calculating a second pre-processing prediction map for the wafer, the second pre-processing prediction map including a second set of predicted measured data for a second set of dies on the wafer;

    calculating a pre-processing confidence map for the wafer, the pre-processing confidence map including a set of confidence data for a third set of dies on the wafer, wherein the confidence data is determined using at least the first pre-processing prediction map;

    determining a prioritized measurement site when confidence data for one or more dies is not within confidence limits for the wafer; and

    obtaining new metrology data for the wafer using a new measurement recipe that includes the prioritized measurement site.

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