Epitaxial growth of compound nitride semiconductor structures
First Claim
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1. A method of fabricating a compound nitride semiconductor structure, the method comprising:
- flowing a first group-III precursor and a first nitrogen precursor into a first processing chamber, the first group-III precursor comprising a first group-III element;
depositing a first layer over the substrate with a thermal chemical-vapor-deposition process within the first processing chamber using the first group-III precursor and the first nitrogen precursor, the first layer comprising nitrogen and the first group-III element;
transferring the substrate from the first processing chamber to a second processing chamber different from the first processing chamber after depositing the first layer;
flowing a second group-III precursor and a second nitrogen precursor into the second processing chamber, the second group-III precursor comprising a second group-III element not comprised by the first group-III precursor; and
depositing a second layer over the first layer with a thermal chemical-vapor-deposition process within the second processing chamber using the second group-III precursor and the second nitrogen precursor.
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Abstract
Apparatus and methods are described for fabricating a compound nitride semiconductor structure. Group-III and nitrogen precursors are flowed into a first processing chamber to deposit a first layer over a substrate with a thermal chemical-vapor-deposition process. The substrate is transferred from the first processing chamber to a second processing chamber. Group-III and nitrogen precursors are flowed into the second processing chamber to deposit a second layer over the first layer with a thermal chemical-vapor-deposition process. The first and second group-III precursors have different group-III elements.
150 Citations
31 Claims
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1. A method of fabricating a compound nitride semiconductor structure, the method comprising:
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flowing a first group-III precursor and a first nitrogen precursor into a first processing chamber, the first group-III precursor comprising a first group-III element;
depositing a first layer over the substrate with a thermal chemical-vapor-deposition process within the first processing chamber using the first group-III precursor and the first nitrogen precursor, the first layer comprising nitrogen and the first group-III element;
transferring the substrate from the first processing chamber to a second processing chamber different from the first processing chamber after depositing the first layer;
flowing a second group-III precursor and a second nitrogen precursor into the second processing chamber, the second group-III precursor comprising a second group-III element not comprised by the first group-III precursor; and
depositing a second layer over the first layer with a thermal chemical-vapor-deposition process within the second processing chamber using the second group-III precursor and the second nitrogen precursor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of fabricating a compound nitride semiconductor structure, the method comprising:
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flowing a first gallium-containing precursor, a first nitrogen-containing precursor, and a first carrier gas into a first processing chamber, the first processing chamber being adapted to provide rapid growth of GaN;
depositing a GaN layer over the substrate with a thermal chemical-vapor-deposition process within the first processing chamber using the first gallium-containing precursor and the first nitrogen-containing precursor;
transferring the substrate from the first processing chamber to a second processing chamber in a high-purity atmosphere, the second processing chamber being adapted to provide enhanced uniformity of deposited material;
depositing a Ga transition layer having a thickness less than 10,000 Å
on the GaN layer in the second processing chamber;
flowing a second gallium-containing precursor, a group-III precursor, a second nitrogen-containing precursor, and a second carrier gas into the second processing chamber, the group-III precursor comprising a group-III element different from gallium; and
depositing an group-III-Ga—
N layer over the GaN transition layer with a thermal chemical-vapor-deposition process within the second processing chamber using the second gallium-containing precursor, the group-III precursor, and the second nitrogen-containing precursor. - View Dependent Claims (19, 20, 21)
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22. A cluster tool comprising:
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a first housing defining a first processing chamber that includes a first substrate holder;
a second housing defining a second processing chamber that includes a second substrate holder, the second processing chamber being different from the first processing chamber;
a robotic transfer system adapted to transfer substrates between the first and second substrate holders in a controlled environment;
a gas-delivery system configured to introduce gases into the first and second processing chambers;
a pressure-control system for maintaining selected pressures within the first and second processing chambers;
a temperature-control system for maintaining selected temperatures within the first and second processing chambers;
a controller for controlling the robotic transfer system the gas-delivery system, the pressure-control system, and the temperature-control system; and
a memory coupled to the controller, the memory comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of the cluster tool, the computer-readable program including;
instructions to control the gas-delivery system to flow a first group-III precursor, a first nitrogen precursor, and a first carrier gas into the first processing chamber, the first group-III precursor comprising a first group-III element;
instructions to control the pressure-control system and the temperature-control system to deposit a first layer over the substrate with a thermal chemical-vapor-deposition process within the first processing chamber, the first layer comprising nitrogen and the first group-III element;
instructions to control the robotic transfer system to transfer the substrate from the first processing chamber to the second processing chamber after depositing the first layer;
instructions to control the gas-delivery system to flow a second group-III precursor, a second nitrogen precursor, and a second carrier gas into the second processing chamber, the second group-III precursor comprising a second group-III element not comprised by the first group-III precursor; and
instructions to control the pressure-control system and the temperature-control system to deposit a second layer over the first layer with a thermal chemical-vapor-deposition process within the second processing chamber. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification