Silicon-containing layer deposition with silicon compounds

• US 20070240632A1
• Filed: 10/12/2006
• Published: 10/18/2007
• Est. Priority Date: 10/18/2002
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Carlson, David, Singh, Kaushal, Comita, Paul, Scudder, Lance
• Granted Patent: US 7,645,339 B2
• Time in Patent Office: Days
• US Class Current: 117/106
• CPC Class Codes: C01B 33/04 Hydrides of silicon
• CPC Class Codes: C01B 33/107 Halogenated silanes
• CPC Class Codes: C07F 7/0896 Compounds with a Si-H linkage
• CPC Class Codes: C07F 7/12 Organo silicon halides
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

Abstract

Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

Claims

1. A method for selectively and epitaxially depositing a silicon-containing material on a substrate, comprising:

positioning a substrate comprising a crystalline surface and a non-crystalline surface within a process chamber;

heating the substrate to a predetermined temperature;

exposing the substrate to a process gas comprising a silicon source selected from the group consisting of isotetrasilane, cyclic-tetrasilane, cyclic pentasilane, and neopentasilane; and

depositing an epitaxial layer on the crystalline surface.

2. The method of claim 1, wherein the predetermined temperature is about 600°

C.

3. The method of claim 2, wherein the epitaxial layer is a silicon epitaxial layer.

4. The method of claim 3, wherein the process gas further comprises hydrogen gas, a germanium source, a dopant source, or combinations thereof.

5. The method of claim 3, wherein the silicon epitaxial layer comprises a phosphorus concentration within a range from about 10¹⁹ atoms/cm³ to about 10²¹ atoms/cm³.

6. The method of claim 1, wherein the process gas further comprises a carbon source.

7. The method of claim 6, wherein the carbon source is selected from the group consisting of a silicon carbon source, an alkane source, an alkene source, an alkyne source, derivatives thereof, and combinations thereof.

8. The method of claim 7, wherein the carbon source is a silicon carbon source comprising the chemical formula:

wherein R is carbon and X is hydrogen.

9. The method of claim 6, wherein the carbon source is methylsilane.

10. The method of claim 6, wherein the epitaxial layer comprises silicon carbide.

11. The method of claim 10, wherein the epitaxial layer comprises a carbon concentration of about 5 at % or less.

12. The method of claim 11, wherein the carbon concentration is within a range from about 200 ppm to about 2 at %.

13. The method of claim 1, wherein the non-crystalline surface comprises dielectric features further comprising an oxide material, a nitride material, or combinations thereof.

14. The method of claim 13, wherein the dielectric features are left bare immediately after depositing the epitaxial layer.

15. The method of claim 13, wherein the dielectric features remain covered after immediately depositing the epitaxial layer.

16. The method of claim 1, wherein the substrate is exposed to a HF solution during a pretreatment process prior to depositing the epitaxial layer.

17. The method of claim 16, wherein the pretreatment process further comprises heating the substrate to about 800°

C. within a hydrogen atmosphere after the HF solution exposure.

31. The method of claim 1, wherein the silicon source comprises isotetrasilane.

18. A method for blanket depositing a silicon-containing material on a substrate, comprising:

positioning a substrate containing a crystalline surface and at least one feature surface within a process chamber, wherein the at least one feature surface comprises an oxide material, a nitride material, or combinations thereof;

heating the substrate to a predetermined temperature;

exposing the substrate to a process gas comprising a silicon source selected from the group consisting of isotetrasilane, cyclic-tetrasilane, cyclic pentasilane, and neopentasilane; and

depositing a silicon-containing blanket layer across the crystalline surface and the feature surfaces, wherein the silicon-containing blanket layer comprises a silicon-containing epitaxial layer selectively deposited on the crystalline surface.

32. The method of claim 18, wherein the silicon source comprises isotetrasilane.

19-20. -20. (canceled)

21. A method for blanket depositing a silicon-containing material on a substrate, comprising:

positioning a substrate comprising a crystalline surface and feature surfaces within a process chamber;

heating the substrate to a predetermined temperature;

exposing the substrate to a process gas comprising a silicon source selected from the group consisting of isotetrasilane, cyclic-tetrasilane, cyclic pentasilane, and neopentasilane and a carbon source; and

depositing a silicon carbide blanket layer across the crystalline surface and the feature surfaces, wherein the silicon carbide blanket layer comprises a silicon carbide epitaxial layer selectively deposited on the crystalline surface.

22. The method of claim 21, wherein the silicon carbide epitaxial layer comprises a carbon concentration of about 5 at % or less.

23. The method of claim 22, wherein the carbon concentration is within a range from about 200 ppm to about 2 at %.

24. The method of claim 23, wherein the carbon source is selected from the group consisting of a silicon carbon source, an alkane source, an alkene source, an alkyne source, derivatives thereof, and combinations thereof.

25. The method of claim 23, wherein the carbon source is methylsilane.

26. The method of claim 21, wherein the process gas further comprises hydrogen gas, a germanium source, a dopant source, or combinations thereof.

27. The method of claim 21, wherein the silicon carbide epitaxial layer comprises a phosphorus concentration within a range from about 10¹⁹ atoms/cm³ to about 10²¹ atoms/cm³.

28. The method of claim 21, wherein the feature surfaces comprise oxides, nitrides, or combinations thereof.

29. The method of claim 28, wherein the feature surfaces are left bare immediately after depositing the epitaxial layer.

30. The method of claim 28, wherein the feature surfaces remain covered immediately after depositing the epitaxial layer.

33. The method of claim 21, wherein the silicon source comprises isotetrasilane.