ELECTROLUMINESCENT DEVICE AND METHODS FOR FABRICATING THE SAME

• US 20070241331A1
• Filed: 11/30/2006
• Published: 10/18/2007
• Est. Priority Date: 04/12/2006
• Status: Abandoned Application

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Lee, Hsin-Hung, Shih, Ming-Chang, Chen, Yun-Sheng
• Application Number:
  US11/564,938
• Publication Number:
  US 20070241331A1
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/80518 Reflective anodes, e.g. ITO combined with thick metallic layers

Abstract

Electroluminescent devices and methods for fabricating the same are provided. An exemplary embodiment of an electroluminescent device comprises a substrate. A thin film transistor (TFT) is formed on the substrate. An insulating layer is formed to overlie the TFT and the substrate. An opening is formed in the insulating layer, exposing a source/drain region of the TFT. A conductive layer is formed over a portion of the insulating layer, filling the opening. A protection layer is formed overlying a portion of the insulating layer and the conductive layer. A light-emitting layer is formed overlying a portion of the conductive layer not covered by the protection layer. A top electrode is formed to overlie the light-emitting layer.

Claims

1. An electroluminescent device, comprising

a substrate;

a thin film transistor (TFT) formed on the substrate;

an insulating layer overlying the TFT;

an opening formed in the insulating layer, exposing a source/drain region of the TFT;

a conductive layer formed over a portion of the insulating layer, filling the opening;

a protection layer overlying a portion of the insulating layer and the conductive layer;

a light-emitting layer overlying a portion of the conductive layer not covered by the protection layer; and

a top electrode overlying the light-emitting layer.

2. The electroluminescent device as claimed in claim 1, wherein the portion of the conductive layer not covered by the conducting layer functions as a bottom electrode.

3. The electroluminescent device as claimed in claim 1, wherein the light-emitting layer comprises organic materials.

4. The electroluminescent device as claimed in claim 1, wherein the electroluminescent device emits light toward a direction away from the substrate.

5. An electroluminescent device, comprising

a substrate;

a thin film transistor (TFT) formed on the substrate;

an insulation layer overlying the TFT and the substrate;

an opening formed in the insulating layer, exposing a source/drain region of the TFT;

a transparent conductive layer conformably formed over the insulating layer and in the opening;

an opaque conductive layer overlying a portion of the transparent conductive layer;

a protection layer overlying the opaque conductive layer and the transparent conductive layer, exposing a portion of the transparent conductive layer;

a light-emitting layer overlying the portion of the transparent conductive layer exposed by the protection layer; and

a top electrode overlying the light-emitting layer.

6. The electroluminescent device as claimed in claim 5, wherein the portion of the transparent conductive layer not covered by the protection layer functions as a bottom electrode.

7. The electroluminescent device as claimed in claim 5, wherein the light-emitting layer comprises organic materials.

8. The electroluminescent device as claimed in claim 5, wherein the electroluminescent device emits light toward the substrate.

9. A method for fabricating an electroluminescent device, comprising

providing a substrate;

forming a first thin film transistor (TFT) and a second thin film transistor (TFT) on the substrate, wherein the first and second TFTs comprises different conductivities;

forming an insulating layer, covering the first and second TFTs and the substrate;

forming a plurality of openings in the insulating layer, respectively exposing a pair of source/drain regions of the first and second TFTs;

forming a conductive layer over a portion of the insulating layer, filling the openings and covering portions of the insulating layer adjacent thereto;

forming a protection layer over the conductive layer, exposing a portion of the conductive layer adjacent to the first TFT;

forming a light-emitting layer over the protection layer and the portion of the conductive layer exposed by the protection layer; and

forming a top electrode overlying the light-emitting layer.

10. The method as claimed in claim 9, wherein the first TFT is a P-type transistor and the second TFT is an N-type transistor.

11. The method as claimed in claim 9, wherein the portion of the conductive layer exposed by the protection layer functions as a bottom electrode.

12. The method as claimed in claim 9, wherein the light-emitting layer comprises organic materials.

13. The method as claimed in claim 9, wherein the electroluminescent device emits light toward a direction away from the substrate.

14. The method as claimed in claim 9, wherein the conductive layer comprises opaque conductive materials.

15. The method as claimed in claim 9, further comprising a step of forming an opaque conductive layer over the conductive layer exposed by the protection layer and the conductive layer comprises transparent conductive materials.

16. The method as claimed in claim 15, wherein the electroluminescent device emits light toward the substrate.

24. The method as claimed in claim 15, wherein the electroluminescent device emits light toward the substrate.

17. A method for fabricating an electroluminescent device, comprising

providing a substrate;

forming a thin film transistor (TFT) on the substrate;

forming an insulating layer, covering the TFTs and the substrate;

forming a plurality of openings in the insulating layer, respectively exposing a pair of source/drain regions of the TFT;

forming a conductive layer over a portion of the insulating layer, filling the openings and covering portions of the insulating layer adjacent thereto;

forming a protection layer over the conductive layer, exposing a portion of the conductive layer adjacent to the TFT;

forming a light-emitting layer over the portion of the conductive layer exposed by the protection layer; and

forming a top electrode overlying the light-emitting layer.

18. The method as claimed in claim 17, wherein the TFT is a P-type transistor.

19. The method as claimed in claim 17, wherein the portion of the conductive layer exposed by the protection layer functions as a bottom electrode.

20. The method as claimed in claim 17, wherein the light-emitting layer comprises organic materials.

21. The method as claimed in claim 17, wherein the electroluminescent device emits light toward a direction away from the substrate.

22. The method as claimed in claim 17, wherein the conductive layer comprises opaque conductive materials.

23. The method as claimed in claim 17, further comprising a step of forming an opaque conductive layer over the conducting layer exposed by the protection layer and the conductive layer comprises transparent conductive materials.