Semiconductor light-emitting device and method of fabricating the same
First Claim
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1. A semiconductor light-emitting device, comprising a multi-layer structure, wherein an electrode is disposed on a surface of the multi-layer structure, and the electrode comprising a plurality of bonding pad.
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Abstract
The present invention provides a semiconductor light emitting device which includes a multi-layer structure. Additionally, an electrode is disposed on a first surface of the multi-layer structure. Furthermore, the electrode includes a plurality of bonding pads.
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Citations
17 Claims
- 1. A semiconductor light-emitting device, comprising a multi-layer structure, wherein an electrode is disposed on a surface of the multi-layer structure, and the electrode comprising a plurality of bonding pad.
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10. A semiconductor light-emitting device, comprising:
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a substrate; a multi-layer structure, disposing over the substrate, and an electrode disposing on a surface of the multi-layer structure; and a plurality of wires connecting to the electrode. - View Dependent Claims (11, 12, 13)
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14. A method of fabricating a semiconductor light-emitting device, the method comprising the steps of:
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(a) preparing a substrate; (b) forming a semiconductor multi-layer structure over the substrate; and (c) disposing an electrode on a surface of the semiconductor multi-layer structure, and the electrode comprising a plurality of bonding pads. - View Dependent Claims (15, 16, 17)
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Specification