Semiconductor light-emitting device and method of fabricating the same

• US 20070241345A1
• Filed: 04/13/2007
• Published: 10/18/2007
• Est. Priority Date: 04/14/2006
• Status: Abandoned Application

• Current Assignee: High Power Optoelectronics, Inc.
• Original Assignee: High Power Optoelectronics, Inc.
• Inventors: Huang, Kuo-Hsin
• Application Number:
  US11/785,024
• Publication Number:
  US 20070241345A1
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 2224/4847 the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

The present invention provides a semiconductor light emitting device which includes a multi-layer structure. Additionally, an electrode is disposed on a first surface of the multi-layer structure. Furthermore, the electrode includes a plurality of bonding pads.

Claims

1. A semiconductor light-emitting device, comprising a multi-layer structure, wherein an electrode is disposed on a surface of the multi-layer structure, and the electrode comprising a plurality of bonding pad.

2. The semiconductor light-emitting device of claim 1, wherein the electrode is a p-type electrode.

3. The semiconductor light-emitting device of claim 1, wherein the electrode is an n-type electrode.

4. The semiconductor light-emitting device of claim 1, wherein the plurality of bonding pads are electrically connected with each other through a conductor.

5. The semiconductor light-emitting device of claim 4, wherein the conductor is a metal.

6. The semiconductor light-emitting device of claim 4, wherein the conductor is a semiconductor.

7. The semiconductor light-emitting device of claim 1, wherein the area of each the plurality of bonding pads is in the range of 1% to 25% of the area of the surface.

8. The semiconductor light-emitting device of claim 1, wherein the plurality of bonding pads further includes a first bonding pad and a second bonding pad, and the first bonding pad and the second bonding pad are disposed on a diagonal of the surface.

9. The semiconductor light-emitting device of claim 1, further comprising a plurality of wires connecting to the plurality of bonding pads respectively.

10. A semiconductor light-emitting device, comprising:

a substrate;

a multi-layer structure, disposing over the substrate, and an electrode disposing on a surface of the multi-layer structure; and

a plurality of wires connecting to the electrode.

11. The semiconductor light-emitting device of claim 10, wherein the electrode is a p-type electrode.

12. The semiconductor light-emitting device of claim 10, wherein the electrode is an n-type electrode.

13. The semiconductor light-emitting device of claim 10, wherein the plurality of wires further includes a first wire and a second wire, and the first wire and the second wire are disposed on a diagonal of the surface.

14. A method of fabricating a semiconductor light-emitting device, the method comprising the steps of:

(a) preparing a substrate;

(b) forming a semiconductor multi-layer structure over the substrate; and

(c) disposing an electrode on a surface of the semiconductor multi-layer structure, and the electrode comprising a plurality of bonding pads.

15. The method of claim 14, further comprising the step of:

(d) connecting a plurality of wires to the plurality of bonding pads respectively.

16. The method of claim 14, wherein the area of each the plurality of bonding pads is in the range of 1% to 25% of the area of the surface.

17. The method of claim 14, wherein the plurality of bonding pads further includes a first bonding pad and a second bonding pad, and the first bonding pad and the second bonding pad are disposed on a diagonal of the surface.