Semiconductor light emitting device

• US 20070241348A1
• Filed: 04/16/2007
• Published: 10/18/2007
• Est. Priority Date: 04/17/2006
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Inoue, Yoshiki, Sano, Masahiko
• Granted Patent: US 8,168,996 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor

Abstract

An excellent light emitting element capable of improving problems caused by a material having high light-reflectivity and susceptible to electromigration, especially Al used for the electrode. FIG. 2A depicts semiconductor light emitting element having a first and second electrodes 20 and 30 disposed at a same surface side respectively on a first and second conductive type semiconductor layer 11 and 13. In the electrode disposing surface, the first electrode 20 comprises a first base part 23 and a first extended part 24 extending from the first base part, and a plurality of separated external connecting parts 31 of the second electrode 30 arranged side by side in extending direction of the first extended part.

Claims

1. A semiconductor light emitting device having a first electrode and a second electrode respectively provided on a first conductive type semiconductor layer and a second conductive type semiconductor layer on a same surface side,

wherein in the same surface,

the first electrode comprises a plurality of electrodes, and at least one pair of the electrodes is arranged facing each other, and

the second electrode is arranged so that at least a part of the second electrode is spaced from the first electrode in the facing direction side between the first electrodes arranged facing each other, and has a plurality of external connecting parts arranged side by side spaced from each other.

2. The semiconductor light emitting device according to claim 1, wherein the first electrodes arranged facing each other each comprises, in the facing direction, a first base part and a first extended part extending from the first base part in the direction of the facing electrode, and the external connecting parts arranged side by side are provided between the first base parts and/or the first extended parts of the first electrodes.

3. The semiconductor light emitting device according to claim 2, wherein at least a part of the external connecting parts arranged side by side overlap with the first extended part in the extending direction.

4. The semiconductor light emitting device according to claim 3, wherein the first electrode comprises a first layer of an Al alloy at a contacting side with the first conductive type semiconductor layer and a second layer on the first layer, the Al alloy contains Cu or Si and Cu.

5. The semiconductor light emitting device according to claim 1, wherein in a direction different than the facing direction, the first electrodes facing each other and a group region including the external connecting parts of the second electrode which are arranged side by side are arranged alternately, and a distance between the group regions is larger than a distance between the external connecting parts which are arranged side by side.

6. A semiconductor light emitting device having a first electrode and a second electrode respectively provided on a first conductive type semiconductor layer and a second conductive type semiconductor layer on a same surface side,

wherein in the same surface,

the first electrode comprises a plurality of electrodes each comprising a first base part and a first extended part extending from the first base part in the facing direction of the electrodes,

the second electrode has, in a region between the electrodes in the extending direction of the first electrodes, a plurality of external connecting parts at least arranged in a line in the extending direction,

the external connecting parts arranged in a line comprise an external connecting portion at both end parts and an intermediate external connecting part provided between the external connecting parts at both end parts, and

the intermediate external connecting parts are, in the facing direction of the first electrodes, provided in a region between the end parts of the first extended parts,

a part of at least one of the external connecting parts at the end parts overlaps with the first extended part.

7. The semiconductor light emitting device according to one of claim 6, wherein an external connecting part which is different than the external connecting part overlapping with the first extended part of the second electrode is arranged so as to be separated from an extended end of the extended part in extending direction.

8. The semiconductor light emitting device according to claim 6, wherein the first electrode comprises a first layer of an Al alloy at a contacting side with the first conductive type semiconductor layer and a second layer on the first layer, the Al alloy contains Cu or Si and Cu.

9. The semiconductor light emitting device according to claim 6, wherein the first base part of the first electrode is an external connecting part and is wider than the first extended part.

10. The semiconductor light emitting device according to claim 9, wherein in a direction different than the extending direction, the first electrodes opposing each other and an external connecting parts of the second electrode which are arranged spaced from the region between the first base parts of the first electrodes and arranged in a line, are arranged alternately.

12. The semiconductor light emitting device according to claim 6, wherein the first electrode comprises a first layer of an Al alloy at a contacting side with the first conductive type semiconductor layer and a second layer on the first layer, the Al alloy contains Cu or Si and Cu.

13. The semiconductor light emitting device according to claim 6, wherein the first electrode comprises a first base part and a first extended part extending from the first base part toward another first base part in the facing direction, and the first base part is an external connecting part which is wider than the first extended part.

17. The semiconductor light emitting device according to claims 6, wherein the second electrode at least comprises a first layer at the second conductive type semiconductor layer side and a second layer on the first layer, and the first layer has a higher reflectivity to light from the light emitting device than that of the second layer, and

the external connecting parts of the second electrode are provided on the second layer of the second electrode.

11. A semiconductor light emitting device having a first electrode and a second electrode provided on a first conductive type semiconductor layer and a second conductive type semiconductor layer respectively on a same surface side,

wherein in the same surface,

the first electrode comprises a plurality of electrodes, and at least one pair of the electrodes are arranged facing each other, and

the second electrode comprises a plurality of external connecting parts and a group region including the external connecting parts which are arranged side by side in the facing direction in a region between the first electrodes,

and in the facing direction, each group region is arranged at larger distance than a distance between the external connecting parts which are arranged side by side, or the external connecting parts which are arranged side by side are placed with a configuration having a shorter period and the each group region is placed with a configuration having a long period.

14. The semiconductor light emitting device according to claim 11, wherein in a different direction than the facing direction, the first electrodes facing each other and the group region of the second electrode are arranged alternately.

15. A semiconductor light emitting device having a first electrode and a second electrode on a first conductive type semiconductor layer and a second conductive type semiconductor layer respectively on a same surface side,

wherein in the same surface,

the first electrode comprises a plurality of electrodes, each of the plurality of electrodes comprises a first base part and a first extended part extending from the first base part in a direction along which the first electrodes are facing each other, the first base part is wider than the first extended part, and a part of the first electrode is arranged in width direction,

the second electrode has, in the extending direction of the first extended parts, a group region in which a plurality of external connecting parts which are separated from each other and arranged in a line, between the first electrodes.

the group region comprises, in the facing direction, an overlapped part provided in the region between the extended parts spaces from the region between the base parts of the first electrodes facing each other.

16. The semiconductor light emitting device according to claim 15, wherein the group regions are arranged in the width direction at approximately regular intervals,

the first electrodes are arranged in the width direction at approximately regular intervals, and

the group regions and the first electrodes are arranged alternately in the width direction.