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SEMICONDUCTOR DEVICE

  • US 20070241402A1
  • Filed: 04/10/2007
  • Published: 10/18/2007
  • Est. Priority Date: 04/12/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an SOI substrate having a semiconductor substrate, a buried oxide film formed on said semiconductor substrate, and an SOI layer having a first conductivity type formed on said buried oxide film; and

    at least one MOS transistor provided on said SOI layer, wherein said at least one MOS transistor comprises;

    a first electrode region and a second electrode region having a second conductivity type and selectively provided in the surface of said SOI layer;

    a body region having a first conductivity type and corresponding to said SOI layer sandwiched between said first electrode region and said second electrode region;

    a gate electrode provided above said body region;

    a partial isolation insulation film selectively provided in said SOI layer surface corresponding to the lower part of at least one end of both ends of said gate electrode in a gate width direction, in the peripheral region of an active region comprising said first electrode region, said second electrode region and said body region;

    a semiconductor region provided in the surface of said SOI layer so as to be adjacent to said partial isolation insulation film; and

    at least one semiconductor region within the electrode region having a first conductivity type, selectively provided in the surface of said first electrode region in the vicinity of said gate electrode and electrically connected to said body region, whereinsaid partial isolation insulation film has said SOI layer continued from said body region, in a lower part thereof,said semiconductor region is in contact with said SOI layer under said partial isolation insulation film, anda region other than the partial isolation insulation film in the peripheral region of said active region is surrounded by a full isolation insulation film penetrating said SOI layer and reaching said buried oxide film.

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