Magnetic memory device and method for fabricating the same
First Claim
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1. A magnetic memory device comprising:
- a first magnetic shield film;
a magnetoresistive effect element formed over the first magnetic shield film and including a first magnetic layer, a non-magnetic layer formed on the first magnetic layer and a second magnetic layer formed on the non-magnetic layer, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection; and
a second magnetic shield film formed over a side wall of the magnetoresistive effect element.
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Abstract
The magnetic memory device includes a magnetic shield film 48, and a magnetoresistive effect element 62 formed over the magnetic shield film 48 and including a magnetic layer 52, a non-magnetic layer 54 and a magnetic layer 56, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield film 68 formed over the side wall of the magnetoresistive effect element 62. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect element 62 can be effectively prevented.
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Citations
13 Claims
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1. A magnetic memory device comprising:
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a first magnetic shield film; a magnetoresistive effect element formed over the first magnetic shield film and including a first magnetic layer, a non-magnetic layer formed on the first magnetic layer and a second magnetic layer formed on the non-magnetic layer, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection; and a second magnetic shield film formed over a side wall of the magnetoresistive effect element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for fabricating a magnetic memory device comprising the steps of:
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forming a first magnetic shield film; forming over the first magnetic shield film a magnetoresistive effect element including a first magnetic layer, a non-magnetic layer formed on the first magnetic layer and a second magnetic layer formed on the non-magnetic layer; and forming a second magnetic shield film over a side wall of the magnetoresistive effect element. - View Dependent Claims (10, 11, 12, 13)
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Specification