Processes and structures for epitaxial growth on laminate substrates

• US 20070243703A1
• Filed: 04/13/2007
• Published: 10/18/2007
• Est. Priority Date: 04/14/2006
• Status: Abandoned Application

• Current Assignee: Aonex Technologies Inc. (AmberWave Systems Corporation)
• Original Assignee: Aonex Technologies Inc. (AmberWave Systems Corporation)
• Inventors: Olson, Sean, Zahler, James M., Pinnington, Thomas, Tsai, Charles
• Application Number:
  US11/785,038
• Publication Number:
  US 20070243703A1
• Time in Patent Office: Days
• US Class Current: 438/603
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02461 Phosphides
• CPC Class Codes: H01L 21/02463 Arsenides
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/0251 Graded layers
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187

Abstract

A method of making a semiconductor device includes providing a laminate substrate made by bonding a II-VI or III-V semiconductor laminate film to a support substrate, and preparing the laminate film to enable growth of a II-VI or III-V semiconductor device layer on the laminate substrate.

Claims

1. A method of making a semiconductor device, comprising:

providing a laminate substrate made by bonding a II-VI or III-V semiconductor laminate film to a support substrate; and

annealing the laminate substrate in an overpressure of a respective group VI or group V element.

2. The method of claim 1, further comprising epitaxially growing a semiconductor buffer layer on the laminate film of the laminate substrate.

3. The method of claim 1, wherein the respective Group VI or Group V element is the same as a respective Group VI or V element in the II-VI or III-V laminate film.

4. The method of claim 1, wherein the overpressure comprises a respective Group VI and Group V compound.

5. The method of claim 1, wherein group V or group VI containing gases are transported to a growth chamber by means of a carrier gas, and the carrier gas flow rate during the annealing process is less than a flow rate during the subsequent growth of a device structure.

6. The method of claim 1, wherein the laminate film comprises GaN and the overpressure comprises ammonia gas or a mixture of ammonia and hydrogen gas or ammonia and nitrogen gas.

7. A method of making a semiconductor device, comprising:

providing a laminate substrate made by bonding a III-V laminate film to a support substrate; and

epitaxially growing a buffer layer on the laminate film while providing a mobile Group III element to the laminate substrate.

8. The method of claim 7, wherein the step of providing a mobile Group III element comprises providing indium or an indium-containing compound.

9. The method of claim 8, wherein the III-V laminate film comprises an In or Ga—

Group V film.

10. The method of claim 8, wherein the buffer layer comprises an In, Al or Ga—

Group V film or the buffer layer comprises a ternary or quaternary alloy of In, Al, and/or Ga and Group-V element or elements.

11. The method of claim 8, wherein the buffer layer comprises a ternary or quaternary alloy of one or more of (i) In, Al, or Ga, and (ii) Group-V element or elements.

12. The method of claim 8, wherein the III-V laminate film comprises GaN, the buffer layer comprises InGaN, InAlN, or InAlGaN, and the step of providing a mobile Group III element comprises providing indium or an indium-containing compound.

13. A method of making a semiconductor device, comprising:

providing a laminate substrate made by bonding a laminate film to a support substrate;

epitaxially growing a III-nitride layer on the laminate film, wherein support substrate CTE is substantially equal to III-nitride layer CTE while the laminate film CTE is not equal to the III-nitride layer CTE; and

performing at least one of the following steps;

(1) in-situ deposition of a silicon nitride masking layer using silane or disilane and ammonia precursors;

(2) growth of a low-temperature AlN or GaN buffer layer having an optimized thickness;

(3) inclusion of a plurality of AlN interlayers of thickness between 10 nm and 200 nm within the GaN buffer layer to introduce compressive strain into the film;

(4) use of an indium precursor to reduce strain during III-nitride layer growth;

(5) use of an Al-rich AlN buffer layer to promote compressive strain in an overgrown high-temperature III-nitride layer, or (6) use of a compliant interlayer comprising GaN(1−

y)P(y) where y<

2%, having a thickness between 20 nm and 60 nm.