Organic electroluminescent device

• US 20070243786A1
• Filed: 06/08/2007
• Published: 10/18/2007
• Est. Priority Date: 08/09/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsutsui, Tetsuo
• Granted Patent: US 9,650,245 B2
• Time in Patent Office: Days
• US Class Current: 445/24
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 50/18 Carrier blocking layers
• CPC Class Codes: H10K 50/19 Tandem OLEDs
• CPC Class Codes: H10K 71/841 Applying alternating current [AC] during manufacturing or treatment
• CPC Class Codes: Y10S 428/917 Electroluminescent

Abstract

An organic EL device that has good yields and high reliability as well as high current efficiency is provided by introducing the new concept to the conventional organic EL device structure. An EL device comprising a first electrode 101, a second electrode 102, an electroluminescent layer 103, conductive particles 104, wherein conductive particles 104 are dispersed in the EL layer 103, is used. Current efficiency will be increased since conductive particles serve as the conventional charge generation layer. In addition, fabricating processes will become simplified and fabricating costs will be reduced because the conductive particles and the EL layer can be formed simultaneously.

Claims

1-14. -14. (canceled)

15. A method for manufacturing an electroluminescent device comprising:

forming a first electrode over a substrate;

applying an electroluminescent layer which contains a conductive particle over the first electrode; and

forming a second electrode over the electroluminescent layer.

17. A method for manufacturing an electroluminescent device according to claim 15, further comprising a step of forming a second insulating layer between the electroluminescent layer and the second electrode.

18. A method for manufacturing an electroluminescent device according to claim 15, wherein the conductive particle is a metal particle.

19. A method for manufacturing an electroluminescent device according to claim 15, wherein the conductive particle is a semiconductor particle.

20. A method for manufacturing an electroluminescent device according to claim 15, wherein the conductive particle has an average diameter of 2 nm to 50 nm.

21. A method for manufacturing an electroluminescent device comprising:

forming a first electrode over a substrate;

mixing a conductive particle into a solution;

applying the solution over the first electrode to form an electroluminescent layer; and

forming a second electrode over the electroluminescent layer.

22. A method for manufacturing an electroluminescent device according to claim 21, further comprising a step of forming a first insulating layer between the first electrode and the electroluminescent layer.

23. A method for manufacturing an electroluminescent device according to claim 21, further comprising a step of forming a second insulating layer between the electroluminescent layer and the second electrode.

24. A method for manufacturing an electroluminescent device according to claim 21, wherein the conductive particle is a metal particle.

25. A method for manufacturing an electroluminescent device according to claim 21, wherein the conductive particle is a semiconductor particle.

26. A method for manufacturing an electroluminescent device according to claim 21, wherein the conductive particle has an average diameter of 2 nm to 50 nm.

27. A method for manufacturing an electroluminescent device comprising:

forming a first electrode over a substrate;

mixing a conductive particle into a solution;

dispersing the conductive particle using an ultrasonic wave;

applying the solution over the first electrode to form an electroluminescent layer; and

forming a second electrode over the electroluminescent layer.

28. A method for manufacturing an electroluminescent device according to claim 27, further comprising a step of forming a first insulating layer between the first electrode and the electroluminescent layer.

29. A method for manufacturing an electroluminescent device according to claim 27, further comprising a step of forming a second insulating layer between the electroluminescent layer and the second electrode.

30. A method for manufacturing an electroluminescent device according to claim 27, wherein the conductive particle is a metal particle.

31. A method for manufacturing an electroluminescent device according to claim 27, wherein the conductive particle is a semiconductor particle.

32. A method for manufacturing an electroluminescent device according to claim 27, wherein the conductive particle has an average diameter of 2 nm to 50 nm.