Light Emitting Device and Method of Manufacturing the Same

• US 20070246700A1
• Filed: 04/24/2007
• Published: 10/25/2007
• Est. Priority Date: 04/25/2006
• Status: Abandoned Application

• Current Assignee: LG Innotek Company Limited (LG Corporation)
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Park, Hyung Jo
• Application Number:
  US11/739,138
• Publication Number:
  US 20070246700A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Provided are embodiments of a light emitting device and a method of manufacturing the same. The light emitting device can include a substrate having a nano-sized structure and a semiconductor light emitting structure on the substrate. The method of manufacturing the light emitting device can include forming a nano-sized structure on the surface of the substrate and forming a first conduction type semiconductor layer, an active layer and a second conduction type semiconductor layer on the substrate.

Claims

1. A light emitting device comprising:

a substrate including a photon affecting nano-sized structure; and

a light emitting structure on the substrate.

2. The light emitting device according to claim 1, wherein the substrate is a sapphire, SiC or Si substrate.

3. The light emitting device according to claim 1, wherein the photon affecting nano-sized structure is formed in an uneven shape with a random size or shape on the substrate.

4. The light emitting device according to claim 1, wherein the photon affecting nano-sized structure has a diameter and/or a height of about 100˜

1000 nm.

5. The light emitting device according to claim 1, wherein the photon affecting nano-sized structure comprises at least one nano structure of a cylindrical shape, a lens shape or a circular or non-circular conical shape.

6. The light emitting device according to claim 1, wherein the light emitting structure comprises:

a first conduction type semiconductor layer on the substrate;

an active layer on the first conduction type semiconductor layer; and

a second conduction type semiconductor layer on the active layer.

7. The light emitting device according to claim 6, further comprising a buffer layer and/or an undoped nitride layer formed between the substrate and the first conduction type semiconductor layer.

8. The light emitting device according to claim 6, further comprising at least one of a transparent layer and a third conductive semiconductor layer on the second conduction type semiconductor layer.

9. The light emitting device according to claim 1, wherein the photon affecting nano-sized structure comprises at least one or a mixture of two or more of SiO₂, Si₃N₄, Ag, Cr, Ni, Au and Pt.

10. A light emitting device comprising:

a substrate including a photon affecting nano-sized structure having an uneven shape;

an n-type semiconductor layer on the substrate;

an active layer on the n-type semiconductor layer; and

a p-type semiconductor layer on the active layer.

11. The light emitting device according to claim 10, further comprising a buffer layer and/or an undoped nitride layer formed between the substrate and the n-type semiconductor layer.

12. The light emitting device according to claim 10, wherein the photon affecting nano-sized structure is formed to have at least one side of 100 nanometers or more.

13. A method of manufacturing a light emitting device, the method comprising:

forming a photon affecting nano-sized structure on a substrate;

forming a first conduction type semiconductor layer on the substrate;

forming an active layer on the first conduction type semiconductor layer; and

forming a second conduction type semiconductor layer on the active layer.

14. The method according to claim 13, wherein the forming of the photon affecting nano-sized structure comprises:

forming a first mask layer on the substrate;

forming a nano-sized cluster pattern on the first mask layer;

etching the first mask layer using the cluster pattern; and

etching the surface of the substrate using the cluster pattern and the etched first mask layer to form the photon affecting nano-sized structure.

15. The method according to claim 14, wherein the forming of the nano-sized cluster pattern comprises:

forming a second mask layer made of metal on the first mask layer; and

heat-treating the substrate on which the second mask layer has been formed at a predetermined temperature to form a cluster having a size of about 100-1000 nanometers.

16. The method according to claim 15, wherein the first mask layer is formed of a SiO₂ or Si₃N₄ thin film with a thickness of about 100˜

2000 nanometers.

17. The method according to claim 16, wherein the second mask layer is one or a mixture of two or more of Ag, Cr, Ni, Au and Pt with a thickness of about 5˜

50 nanometers.

18. The method according to claim 15, wherein etching the first mask layer using the cluster pattern comprises performing dry etching.

19. The method according to claim 15, wherein etching the surface of the substrate comprises performing high density plasma etching.

20. The method according to claim 14, further comprising forming at least one of a buffer layer and undoped nitride layer on the substrate.