Semiconductor light emitting element

• US 20070246735A1
• Filed: 04/02/2007
• Published: 10/25/2007
• Est. Priority Date: 04/03/2006
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Yahata, Kosuke, Moriyama, Miki, Goshonoo, Koichi
• Granted Patent: US 7,723,743 B2
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/06102 the bonding areas being at different heights
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/1703 Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light emitting element has an electrode formed on a semiconductor layer, a passivation film covering a part of a top surface of the electrode, and a multilayer film formed on the electrode. The multilayer film has at least one pair of a Ti layer and a Ni layer, the Ti layer and the Ni layer being stacked alternately in the multilayer film.

Claims

1. A semiconductor light emitting element, comprising:

an electrode formed on a semiconductor layer;

a passivation film covering a part of a top surface of the electrode; and

a multilayer film formed on the electrode,

wherein the multilayer film comprises at least one pair of a Ti layer and a Ni layer, the Ti layer and the Ni layer being stacked alternately in the multilayer film.

2. The semiconductor light emitting element according to claim 1, wherein:

the Ti layer is disposed nearest to the electrode.

3. The semiconductor light emitting element according to claim 1, wherein:

the electrode comprises an Au film on a top thereof.

4. The semiconductor light emitting element according to claim 1, further comprising:

a metal reflecting film formed on the passivation film,

wherein the electrode comprises a p-side electrode comprising a transparent conductive film.

5. The semiconductor light emitting element according to claim 4, wherein:

a lowermost layer of the multilayer film formed on the p-side electrode comprises the Ni layer.

6. The semiconductor light emitting element according to claim 4, further comprising:

a second passivation film formed between the metal reflecting film and the multilayer film.

7. The semiconductor light emitting element according to claim 4, wherein:

the transparent conductive film comprises indium tin oxide (ITO).

8. The semiconductor light emitting element according to claim 4, wherein:

the metal reflecting film comprises at least one of aluminum, silver, an aluminum alloy and a silver alloy.

9. The semiconductor light emitting element according to claim 1, wherein:

the multilayer film comprises an Au film on a top thereof.

10. The semiconductor light emitting element according to claim 1, wherein:

the multilayer film comprises two to five pairs of a Ti layer and a Ni layer.

11. The semiconductor light emitting element according to claim 1, wherein:

the Ti layer comprises a thickness of 0.05 μ

m to 1 μ

m, and the Ni layer comprises a thickness of 0.05 μ

m to 1 μ

m.

12. The semiconductor light emitting element according to claim 1, wherein:

the multilayer film comprises a thickness of 0.2 μ

m to 2.0 μ

m.