×

Phase change memory cell with limited switchable volume

  • US 20070246748A1
  • Filed: 04/25/2006
  • Published: 10/25/2007
  • Est. Priority Date: 04/25/2006
  • Status: Active Grant
First Claim
Patent Images

1. A memory cell comprising:

  • a dielectric layer, the dielectric layer defining a trench having a wide portion and a narrow portion, the narrow portion substantially narrower than the wide portion; and

    a phase change material, the phase change material at least partially filling the wide and narrow portions of the trench, and the phase change material within the narrow portion defining a void;

    wherein a portion of the phase change material is operative to switch between lower and higher electrical resistance states in response to an application of a pulse of electrical current to the memory cell.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×