On-plug magnetic tunnel junction devices based on spin torque transfer switching

• US 20070246787A1
• Filed: 03/29/2006
• Published: 10/25/2007
• Est. Priority Date: 03/29/2006
• Status: Abandoned Application

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Huai, Yiming, Diao, Zhitao, Chen, Eugene, Wang, Lien-Chang
• Application Number:
  US11/394,056
• Publication Number:
  US 20070246787A1
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.

Claims

1. A device, comprising:

a substrate;

a conductive via formed over the substrate and vertically extended substantially perpendicular to the substrate;

a metal plug formed on top of the conductive via;

a dielectric material embedding the metal plug and exposing a top surface of the metal plug; and

a magnetic tunnel junction (MTJ) cell formed on the top surface of the metal plug.

2. The device as in claim 1, further comprising a metal buffer layer between the MTJ cell and the top surface of the metal plug.

3. The device as in claim 1, wherein the MTJ cell is elongated, and wherein the device further comprises:

a conductor line formed over the substrate and positioned to have a portion which spatially overlaps with the MTJ cell, the conductor line being electrically coupled to supply a current across the MTJ cell and through the metal plug and the conductive via.

4. The device as in claim 3, wherein the portion of the conductor line which spatially overlaps with the MTJ cell is parallel to an elongated direction of the MTJ cell.

5. The device as in claim 1, wherein the MTJ cell has a footprint less than a footprint of the metal plug and is position near a center of the top surface of the metal plug and is away from an edge of the metal plug.

6. The device as in claim 1, wherein the MTJ cell has a footprint greater than a footprint of the metal plug.

7. The device as in claim 1, wherein the MTJ cell has a footprint approximately equal to a footprint of the metal plug.

8. The device as in claim 1, further comprising:

a conductor line formed over the substrate and electrically coupled to the MTJ cell to supply a current across the MTJ cell and through the metal plug and the conductive via.

9. The device as in claim 8, further comprising:

a control circuit to control the current to the MTJ cell from the conductor line to change the magnetization direction of the free ferromagnetic layer of the MTJ cell via spin torque transfer.

10. The device as in claim 1, wherein the MTJ cell comprises:

a free ferromagnetic layer having a magnetization direction that is changeable between a first direction and a second substantially opposite direction,

a fixed ferromagnetic layer having a magnetization direction fixed along substantially the first direction, and

an insulator barrier layer formed between the free and fixed ferromagnetic layers to effectuate tunneling of electrons between the free and fixed ferromagnetic layers.

11. A device, comprising:

a substrate;

a magnetic tunnel junction (MTJ) cell formed over the substrate and comprising a free ferromagnetic layer having a magnetization direction that is changeable between a first direction and a second substantially opposite direction, a fixed ferromagnetic layer having a magnetization direction fixed along substantially the first direction, and an insulator barrier layer formed between the free and fixed ferromagnetic layers to effectuate tunneling of electrons between the free and fixed ferromagnetic layers, wherein the magnetic tunnel junction cell is shaped to be elongated along the first direction;

a conductor line formed over the substrate and positioned to have a portion which spatially overlaps with the MTJ cell and is parallel to the first direction of the MTJ cell and is electrically coupled to supply a current across the MTJ cell; and

a control circuit to control the current to the MTJ cell from the conductor line to change the magnetization direction of the free ferromagnetic layer of the MTJ cell via spin torque transfer.

12. A device as in claim 11, further comprising:

a conductive via formed over the substrate and vertically extended substantially perpendicular to the substrate;

a metal plug formed on top of the conductive via; and

a dielectric material embedding the metal plug and exposing a top surface of the metal plug,

wherein the MTJ cell is formed over the top surface of the metal plug.

13. The device as in claim 11, further comprising a metal plug formed over the substrate, wherein the MTJ cell is formed on top of and is connected to the metal plug.

14. The device as in claim 13, wherein the metal plug has a footprint that is less than a footprint of the MTJ cell.

15. A method, comprising:

forming a dielectric layer over a substrate;

subsequently forming a contiguous metal structure to include at least one metal plug which is embedded in the dielectric layer and a metal layer which is atop and covers a top surface of the dielectric layer;

partially removing the metal layer of the contiguous metal structure to leave a remaining metal layer of the metal layer that is atop and covers the top surface of the dielectric layer without exposing the dielectric layer;

forming magnetic tunnel junction (MTJ) layers on the remaining metal layer; and

patterning the MTJ layers to form at least one MTJ cell on top of the remaining metal layer.

16. The method as in claim 15, wherein the MTJ cell is directly positioned above the metal plug, and the remaining metal layer is patterned to confirm to a footprint of the MTJ cell.

17. The method as in claim 16, further comprising:

controlling the patterning of the MTJ layers and the remaining metal layer to make a footprint of the MTJ cell and the remaining metal layer underneath the MTJ cell to be not less than a footprint of the metal plug.

18. The method as in claim 15, further comprising controlling the partial removal of the metal layer of the contiguous metal structure to keep a surface warping less than 200 Å

and a surface roughness less than 3 Å

for the root-mean-square (RMS) value.

19. A method, comprising:

forming a dielectric layer over a substrate;

subsequently forming at least one metal plug embedded in the dielectric layer;

polishing the dielectric layer and the metal plug embedded in the dielectric layer to form a polished surface which exposes a top surface of the metal plug;

forming a conductive buffer layer over the polished surface to cover the dielectric layer and the metal plug;

forming magnetic tunnel junction (MTJ) layers on the conductive buffer layer; and

patterning the MTJ layers to form at least one MTJ cell on the conductive buffer layer and on top of the metal plug.

20. The method as in claim 19, further comprising:

controlling the patterning of the MTJ cell to make a footprint of the MTJ cell less than a footprint of the metal plug and to place the MTJ cell near a center of the top surface of the metal plug and is away from an edge of the metal plug.