Non-planar surface structures and process for microelectromechanical systems

• US 20070249078A1
• Filed: 04/19/2006
• Published: 10/25/2007
• Est. Priority Date: 04/19/2006
• Status: Abandoned Application

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Inventors: Cummings, William, Kogut, Lior, Tung, Ming-Hau, Akella, Sriram
• Application Number:
  US11/406,776
• Publication Number:
  US 20070249078A1
• Time in Patent Office: Days
• US Class Current: 438/48
• CPC Class Codes: B81B 3/0008 Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

Methods of making MEMS devices including interferometric modulators involve depositing various layers, including stationary layers, movable layers and sacrificial layers, on a substrate. Apertures are formed in one or more of the various layers so as to form a non-planar surface on the movable and/or the stationary layers. Other layers may be formed over the formed apertures. Removal of the sacrificial layer from between the resulting non-planar movable and/or stationary layers results in a released MEMS device having reduced contact area and/or a larger surface separation between the movable and stationary layers when the MEMS device is actuated. The reduced contact area results in lower adhesion forces and reduced stiction during actuation of the MEMS device. These methods may be used to manufacture released and unreleased interferometric modulators.

Claims

1. A method of making a microelectromechanical system (MEMS) device, comprising:

providing a substrate;

forming a first sacrificial layer over the substrate;

forming at least one aperture in the first sacrificial layer;

forming a second sacrificial layer over the first sacrificial layer and the at least one formed aperture;

forming an electrically conductive layer over the second sacrificial layer, thereby forming a non-planar interface between the electrically conductive layer and the second sacrificial layer; and

removing the first and second sacrificial layers to form a cavity between the substrate and the electrically conductive layer.

2. The method of claim 1, wherein the substrate comprises a second electrically conductive layer.

3. The method of claim 2, wherein the second electrically conductive layer comprises indium tin oxide.

4. The method of claim 1, wherein the electrically conductive layer comprises a movable layer.

5. The method of claim 1, wherein the substrate comprises a partially reflective layer.

6. The method of claim 1, further comprising patterning the first sacrificial layer.

7. The method of claim 6, wherein the patterning comprises at least one of electron beam lithography and image transfer.

8. The method of claim 6, further comprising:

forming a support structure aperture in at least one of the sacrificial layers; and

depositing a non-conductive material into the support structure aperture.

9. The method of claim 1, wherein forming the first and second sacrificial layers comprises at least one of chemical vapor deposition, physical vapor deposition and sputtering.

10. The method of claim 1, wherein the at least one formed aperture extends entirely through the first sacrificial layer.

11. A method of making an interferometric modulator, comprising:

providing a substrate;

forming a first layer over the substrate;

forming at least one aperture in the first layer;

forming a second layer over at least a portion of the first layer and the at least one aperture, wherein the first layer is thinner than the second layer as measured perpendicular to the substrate;

forming a sacrificial layer over at least a portion of the second layer, thereby forming a non-planar interface between the sacrificial layer and the second layer; and

forming an electrically conductive layer over the sacrificial layer,

the sacrificial layer being removable to thereby form a cavity between the second layer and the electrically conductive layer.

12. The method of claim 11, further comprising forming the first layer to have a thickness of about 500 angstroms or less as measured perpendicular to the substrate.

13. The method of claim 11, wherein the first and second layers both comprise a metal.

14. The method of claim 11, wherein the first and second layers both comprise a dielectric material.

15. The method of claim 11, further comprising planarizing the sacrificial layer prior to forming the electrically conductive layer.

16. The method of claim 15, wherein planarizing comprises at least one of chemical mechanical polishing and spin coating.

17. The method of claim 11, wherein the at least one aperture in the first layer has a cross sectional dimension in a range of about 2 micrometers to about 5 micrometers as measured parallel to the substrate.

18. The method of claim 11, further comprising forming at least two apertures in the first layer, wherein the apertures are separated by a distance in a range of about 4 micrometers to about 100 micrometers.

19. The method of claim 11, wherein the at least one aperture in the first layer has a depth dimension in a range of about 100 angstroms to about 500 angstroms as measured perpendicular to the substrate.

20. The method of claim 11, further comprising patterning the first layer.

21. An unreleased interferometric modulator made by the method of claim 11.

22. The method of claim 11, further comprising removing substantially all of the sacrificial material to thereby form a cavity between the second layer and the electrically conductive layer.

23. A released interferometric modulator made by the method of claim 22.

24. The method of claim 11, wherein the at least one formed aperture extends entirely through the first layer.

25. The method of claim 11, wherein forming at least one of the first layer and the second layer comprises forming at least one of a metal layer, a dielectric layer, a partially reflective layer, a transparent layer, a second electrically conductive layer and a second sacrificial layer.

26. An unreleased microelecromechanical system (MEMS) device, comprising:

a substrate;

a discontinuous first layer over the substrate, the discontinuous first layer comprising at least one aperture;

a second layer continuous over at least a portion of the discontinuous first layer and the at least one aperture, wherein the first layer is thinner than the second layer as measured perpendicular to the substrate;

a sacrificial layer over at least a portion of the second layer;

a non-planar interface between the sacrificial layer and the second layer; and

an electrically conductive layer over the sacrificial layer;

the sacrificial layer being removable to thereby form a cavity between the second layer and the electrically conductive layer.

27. The unreleased MEMS device of claim 26, wherein the first layer has a thickness of about 500 angstroms or less as measured perpendicular to the substrate.

28. The unreleased MEMS device of claim 26, wherein the first and second layers both comprise a metal.

29. The unreleased MEMS device of claim 26, wherein the first and second layers both comprise a dielectric material.

30. The unreleased MEMS device of claim 26, wherein the discontinuous first layer comprises an oxide of silicon.

31. The unreleased MEMS device of claim 26, wherein the second layer comprises an oxide of aluminum.

32. The unreleased MEMS device of claim 26, wherein the discontinuous first layer comprises a different material than the second layer.

33. An interferometric modulator, comprising:

first means for reflecting light;

a second means for reflecting light, wherein the second means for reflecting light is capable of moving towards the first reflecting means in an actuated state;

means for reducing stiction between the first reflecting means and the second reflecting means in the actuated state, while simultaneously not substantially affecting optical properties; and

means for supporting the second reflecting means.

34. The interferometric modulator of claim 33, wherein the first reflecting means comprises a partially reflective layer.

35. The interferometric modulator of claim 33, wherein the second reflecting means comprises a movable reflective layer.

36. The interferometric modulator of claim 33, wherein the stiction reducing means comprises a continuous dielectric layer over a discontinuous layer, and further wherein a depth of the discontinuous layer is in a range of about 100 angstroms to about 500 angstroms as measured perpendicular to the first reflecting means.

37. The interferometric modulator of claim 33, wherein the supporting means comprises a support post.

38. An interferometric modulator, comprising:

a substrate;

a first discontinuous layer over at least a portion of the substrate, the discontinuous first layer comprising at least one aperture;

a second layer continuous over at least a portion of the first discontinuous layer and the at least one aperture, the second layer comprising a non-planar surface, wherein the first discontinuous layer is thinner than the second layer as measured perpendicular to the substrate;

an electrically conductive layer separated from the second layer by a cavity; and

a support structure arranged over the substrate and configured to support the electrically conductive layer.

39. The interferometric modulator of claim 38, wherein the first layer has a thickness of about 500 angstroms or less as measured perpendicular to the substrate.

40. The interferometric modulator of claim 38, wherein the first and second layers both comprise a metal.

41. The interferometric modulator of claim 38, wherein the first and second layers both comprise a dielectric material.

42. The interferometric modulator of claim 38, wherein at least one of the first discontinuous layer and the second layer comprises at least one of a metal layer, a dielectric layer, a partially reflective layer, a transparent layer, a second electrically conductive layer and a second sacrificial layer;

43. An array of interferometric modulators comprising the interferometric modulator of claim 42.

44. A display device, comprising:

an array of interferometric modulators as claimed in claim 43;

a processor that is configured to communicate with the array, the processor being configured to process image data; and

a memory device that is configured to communicate with the processor.

45. The display device of claim 44, further comprising:

a driver circuit configured to send at least one signal to the array.

46. The display device of claim 45, further comprising:

a controller configured to send at least a portion of the image data to the driver circuit.

47. The display device of claim 44, further comprising:

an image source module configured to send the image data to the processor.

48. The display device of claim 47, wherein the image source module comprises at least one of a receiver, transceiver, and transmitter.

49. The display device of claim 44, further comprising:

an input device configured to receive input data and to communicate the input data to the processor.