Composite heater and chill plate

• US 20070251456A1
• Filed: 04/27/2006
• Published: 11/01/2007
• Est. Priority Date: 04/27/2006
• Status: Abandoned Application

• Current Assignee: SOKUDO Co., Ltd. (SCREEN Holdings Co., Ltd.)
• Original Assignee: Applied Materials Incorporated
• Inventors: Herchen, Harald, Ishikawa, Tetsuya, Lue, Brian, Somayaji, Sharathchandra
• Application Number:
  US11/414,730
• Publication Number:
  US 20070251456A1
• Time in Patent Office: Days
• US Class Current: 118/724
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

An integrated system for baking and chilling wafers includes a heater for heating a wafer to an elevated temperature, a chiller for cooling the wafer, and a shuttle operatively connected to the heater and the chiller for transferring the wafer between the heater and the chiller. The chiller further includes a low thermal mass wafer support for providing support to a bottom surface of a wafer and a chill plate coupled to the low thermal mass wafer support for cooling the wafer. The low thermal mass wafer support has a higher thermal conductivity in the plane parallel to the bottom surface of the wafer than in the direction perpendicular to the bottom surface of the wafer. The low thermal mass wafer support can further include a plurality of proximity pins for supporting the wafer.

Claims

1. A system for chilling wafers, comprising:

a low thermal mass wafer support for providing support to a bottom surface of a wafer;

a chill plate coupled to said low thermal mass wafer support for cooling said wafer; and

wherein said low thermal mass wafer support has a higher thermal conductivity in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer.

2. The system of claim 1 wherein said thermal conductivity of said low thermal mass wafer support is 10 times greater in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer.

3. The system of claim 1 wherein said thermal conductivity of said low thermal mass wafer support is 100 times greater in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer.

4. The system of claim 1 wherein said low thermal mass wafer support is made of a carbon composite.

5. The system of claim 1 wherein said low thermal mass wafer support is a heat pipe comprising fluid.

6. The system of claim 1 wherein said low thermal mass wafer support has a thickness of less than 2 mm.

7. The system of claim 1 wherein said low thermal mass wafer support has a thickness of less than 1.2 mm.

8. The system of claim 1 wherein said low thermal mass wafer support has a coefficient of thermal expansion that is less than the coefficient of thermal expansion of said wafer.

9. The system of claim 1 wherein said low thermal mass wafer support is in direct contact with said chill plate.

10. The system of claim 1 further comprising:

support pins that separate said low thermal mass wafer support from said chill plate; and

exchange gas for providing a thermal link between said low thermal wafer support and said chill plate.

11. A system for chilling wafers, comprising:

a low thermal mass wafer support for providing support to a bottom surface of a wafer;

a chill plate coupled to said low thermal mass wafer support for cooling said wafer;

wherein said low thermal mass wafer support has a higher thermal conductivity in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer; and

wherein said low thermal mass wafer support further comprises a plurality of proximity pins for supporting said wafer.

12. The system of claim 11 wherein said proximity pins protrude about 30 to 100 microns above a surface of said low thermal mass wafer support.

13. The system of claim 11 wherein said proximity pins protrude about 30 to 70 microns above a surface of said low thermal mass wafer support.

14. The system of claim 11 wherein said proximity pins are spheres that are partially embedded in said low thermal mass wafer support.

15. The system of claim 11 wherein said proximity pins are spheres made of sapphire.

16. The system of claim 11 wherein said proximity pins are uniformly distributed over the surface of said low thermal mass wafer support.

17. The system of claim 11 wherein said plurality proximity pins are at least three proximity pins.

18. A system for heating wafers, comprising:

a low thermal mass wafer support for providing support to a bottom surface of a wafer;

a heat plate coupled to said low thermal mass wafer support for heating said wafer; and

wherein said low thermal mass wafer support has a higher thermal conductivity in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer.

19. The system of claim 18 wherein said thermal conductivity of said low thermal mass wafer support is 10 times greater in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer.

20. The system of claim 18 wherein said thermal conductivity of said low thermal mass wafer support is 100 times greater in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer.

21. The system of claim 18 wherein said low thermal mass wafer support is made of a carbon composite.

22. The system of claim 18 wherein said low thermal mass wafer support is a heat pipe comprising fluid.

23. A system for chilling wafers, comprising:

a chill plate for cooling a wafer;

a low thermal mass wafer support for supporting said wafer while said wafer is cooled with said chill plate, said low thermal wafer support further comprising at least one resistive element to heat said wafer and to provide an electrostatic force to said wafer during heating;

a bendable support positioned between said low thermal mass wafer support and said chill plate for regulating motion generated by activation of said electrostatic chuck;

wherein said low thermal mass wafer support has a higher thermal conductivity in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer; and

wherein said low thermal mass wafer support further comprises a plurality of proximity pins for supporting said wafer.

24. An integrated system for baking and chilling wafers, comprising:

a heater for heating a wafer to an elevated temperature;

a chiller for cooling said wafer;

a shuttle operatively connected to said heater and said chiller for transferring said wafer between said heater and said chiller;

wherein said chiller further comprises;

a low thermal mass wafer support for providing support to a bottom surface of a wafer;

a chill plate coupled to said low thermal mass wafer support for cooling said wafer; and

wherein said low thermal mass wafer support has a higher thermal conductivity in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer.

25. The integrated system of claim 24 wherein said low thermal mass wafer support further comprises a plurality of proximity pins for supporting said wafer.

26. An integrated system for baking and chilling wafers, comprising:

a heater for heating a wafer to an elevated temperature;

a chiller for cooling said wafer;

a shuttle operatively connected to said heater and said chiller for transferring said wafer between said heater and said chiller;

wherein said heater further comprises;

a low thermal mass wafer support for providing support to a bottom surface of a wafer;

a heat plate coupled to said low thermal mass wafer support for supporting said low thermal mass wafer support and for heating said wafer; and

wherein said low thermal mass wafer support has a higher thermal conductivity in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer.

27. The integrated system of claim 26 wherein said low thermal mass wafer support further comprises a plurality of proximity pins for supporting said wafer.

28. An integrated system for baking and chilling wafers, comprising:

a heater for heating a wafer to an elevated temperature;

a chiller for cooling said wafer;

a shuttle operatively connected to said heater and said chiller for transferring said wafer between said heater and said chiller;

wherein said heater further comprises;

a first low thermal mass wafer support for providing support to a bottom surface of a wafer;

a heat plate coupled to said first low thermal mass wafer support for supporting said first low thermal mass wafer support and for heating said wafer; and

wherein said first low thermal mass wafer support has a higher thermal conductivity in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer; and

wherein said chiller further comprises;

a second low thermal mass wafer support for providing support to a bottom surface of a wafer;

a chill plate coupled to said second low thermal mass wafer support for supporting said second low thermal mass wafer support and for cooling said wafer; and

wherein said second low thermal mass wafer support has a higher thermal conductivity in the plane parallel to said bottom surface of the wafer than in the direction perpendicular to said bottom surface of the wafer.

29. The integrated system of claim 28 wherein said first low thermal mass wafer support further comprises a first plurality of proximity pins for supporting said wafer and said second low thermal mass wafer support further comprises a second plurality of proximity pins for supporting said wafer.