IMAGE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

• US 20070252145A1
• Filed: 04/27/2007
• Published: 11/01/2007
• Est. Priority Date: 04/28/2006
• Status: Active Grant

• Current Assignee: Panasonic Intellectual Property Corporation of America (Panasonic Holdings Corporation)
• Original Assignee: Hitachi Displays Limited (Japan Display Incorporated)
• Inventors: Sato, Takeshi, Toyota, Yoshiaki, Matsumura, Mieko
• Granted Patent: US 7,550,772 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/121 characterised by the geometry or disposition of pixel elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.

Claims

1. An image display device comprising a plurality of gate lines formed on an insulating substrate, a plurality of signal lines formed to cross said plurality of gate lines in a matrix fashion, and a plurality of thin-film transistors,

wherein said plurality of gate lines have a laminated structure, said plurality of thin-film transistors include transistors of two types of an n-channel conductivity type and a p-channel conductivity type, gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as said gate lines, and gate electrodes of thin-film transistors of the other type are electrodes of the same layer as bottom electrodes of said gate lines.

2. The image display device according to claim 1, wherein said gate lines and said signal lines have a laminated structure, and an upper film of said gate lines and a lower film of said signal lines are of the same material.

3. An image display device comprising a plurality of gate lines formed on an insulating substrate, a plurality of signal lines formed to cross said plurality of gate lines in a matrix fashion, and a plurality of thin-film transistors,

wherein said plurality of gate lines have a laminated structure, pixel electrodes are provided in a region surrounded by said plurality of gate lines and said plurality of signal lines, said plurality of thin-film transistors include transistors of two types of an n-channel conductivity type and a p-channel conductivity type, gate electrodes of thin-film transistors of one type are of the same material as said pixel electrodes, and gate electrodes of thin-film transistors of the other type have a laminated structure of a layer of the same material as said gate lines and a layer of the same material as said pixel electrodes.

4. The image display device according to claim 3, wherein gate electrodes of said thin-film transistors of the other type are laminated electrodes of the same configuration as said gate lines, and a lower film of said laminated electrodes and gate electrodes of said thin-film transistors of one type are electrodes of the same layer as said pixel electrodes.

5. The image display device according to claim 3, wherein said pixel electrodes and gate electrodes of said thin-film transistors of one type are transparent electrodes.

6. The image display device according to claim 3, wherein a film thickness of said pixel electrodes and gate electrodes of said thin-film transistors of one type is 20 nm or more to 60 nm or less.

7. The image display device according to claim 3, further comprising an interlayer insulating film between said gate lines and said signal lines, and electrodes of the same material as said pixel electrodes located via said interlayer insulating film above said pixel electrodes.

8. The image display device according to claim 3, wherein intersection portions of said gate lines and said signal lines have a configuration in which the lower film of the gate lines, the interlayer insulating film, and the signal lines are laminated in this order when viewed from the substrate.

9. The image display device according to claim 3, further comprising a passivation film that is in contact with an upper surface of said signal lines, and a light emitting layer formed to be in contact with an upper surface and a side surface of said passivation film and with an upper surface of said pixel electrodes.

10. The image display device according to claim 3, wherein said interlayer insulating film has contact holes, and the image display device has a light emitting layer formed to be in contact with an upper surface of said pixel electrodes and an upper surface and a side surface of said interlayer insulating film.

11. The image display device according to claim 3, wherein said signal lines have a laminated structure, and an oxide film serving as an upper film of said signal lines is formed on a surface of said signal lines.

12. The image display device according to claim 3, wherein gate electrodes of said plurality of thin-film transistors and said gate lines are laminated electrodes having as a lower layer of the same material as said pixel electrodes, and top electrodes of said laminated electrodes are subjected to size reduction processing with respect to the bottom electrodes of the same material as said pixel electrodes.

13. (canceled)