LIGHT EMITTING DEVICE
First Claim
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1. A light emitting device comprising:
- a thin film transistor over a substrate, the thin film transistor comprising a first semiconductor film comprising a source region and a drain region and a gate electrode over the first semiconductor film;
a first capacitor over the substrate, the first capacitor comprising a second semiconductor film and a conductive film over the second semiconductor film;
an insulating film over the thin film transistor and the first capacitor;
a second capacitor comprising a wiring electrically connected to one of the source region and the drain region and a transparent conductive film which is in contact with the insulating film; and
a light emitting element comprising a pixel electrode which is in contact with the insulating film and a light emitting layer formed over the pixel electrode.
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Abstract
A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.
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Citations
16 Claims
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1. A light emitting device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a first semiconductor film comprising a source region and a drain region and a gate electrode over the first semiconductor film;
a first capacitor over the substrate, the first capacitor comprising a second semiconductor film and a conductive film over the second semiconductor film;
an insulating film over the thin film transistor and the first capacitor;
a second capacitor comprising a wiring electrically connected to one of the source region and the drain region and a transparent conductive film which is in contact with the insulating film; and
a light emitting element comprising a pixel electrode which is in contact with the insulating film and a light emitting layer formed over the pixel electrode. - View Dependent Claims (5, 6, 7)
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2. A light emitting device comprising:
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a base film formed over a substrate;
a thin film transistor comprising a first semiconductor film comprising a source region and a drain region and a gate electrode over the first semiconductor film, wherein the first semiconductor film is in contact with the base film;
a first capacitor comprising a second semiconductor film and a conductive film over the second semiconductor film, wherein the second semiconductor film is in contact with the base film;
an insulating film over the thin film transistor and the first capacitor;
a second capacitor comprising a wiring electrically connected to one of the source region and the drain region and a transparent conductive film which is in contact with the insulating film; and
a light emitting element comprising a pixel electrode which is in contact with the insulating film and a light emitting layer formed over the pixel electrode. - View Dependent Claims (8, 9, 10)
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3. A light emitting device comprising:
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a thin film transistor over a substrate, the thin film transistor comprising a first semiconductor film comprising a source region and a drain region, a first gate electrode and a second gate electrode which are formed over the first semiconductor film;
a first capacitor over the substrate, the first capacitor comprising a second semiconductor film and a conductive film over the second semiconductor film;
an insulating film over the thin film transistor and the first capacitor;
a second capacitor comprising a wiring electrically connected to one of the source region and the drain region and a transparent conductive film which is in contact with the insulating film; and
a light emitting element comprising a pixel electrode which is in contact with the insulating film and a light emitting layer formed over the pixel electrode. - View Dependent Claims (11, 12, 13)
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4. A light emitting device comprising:
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a switching thin film transistor over a substrate, the switching thin film transistor comprising a first semiconductor film comprising a source region and a drain region and a gate electrode over the first semiconductor film;
a driving thin film transistor over the substrate;
a first capacitor over the substrate, the first capacitor comprising a second semiconductor film and a conductive film over the second semiconductor film;
an insulating film over the thin film transistor and the first capacitor;
a second capacitor comprising a wiring electrically connected to one of the source region and the drain region and a transparent conductive film which is in contact with the insulating film; and
a light emitting element comprising a pixel electrode which is in contact with the insulating film and a light emitting layer formed over the pixel electrode, wherein the light emitting element being electrically connected to the driving thin film transistor. - View Dependent Claims (14, 15, 16)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKoyama, Jun, Yamazaki, Shunpei, Azami, Munehiro, Arao, Tatsuya
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/66
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CPC Class CodesH01L 27/124 with a particular compositi...H01L 27/1255 integrated with passive dev...H01L 29/78633 with a light shieldH10K 59/1213 the pixel elements being TFTsH10K 59/1216 the pixel elements being ca...H10K 59/122 Pixel-defining structures o...H10K 59/124 Insulating layers formed be...H10K 59/131 Interconnections, e.g. wiri...
