FIELD EFFECT TRANSISTOR FOR DETECTING IONIC MATERIAL AND METHOD OF DETECTING IONIC MATERIAL USING THE SAME
First Claim
1. A field effect transistor for detecting ionic material, the field effect transistor comprising:
- a substrate formed of a semiconductor material;
a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate;
a channel region interposed between the source region and the drain region;
an insulating layer disposed on the channel region and formed of an electrically insulating material;
a first reference electrode disposed at an edge of the upper portion of the insulating layer; and
a second reference electrode disposed to be spaced apart from the insulating layer.
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Accused Products
Abstract
A field effect transistor for detecting ionic material and a method of detecting ionic material using the field effect transistor. The field effect transistor for detecting ionic material includes a substrate formed of a semiconductor material, a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate, a channel region interposed between the source region and the drain region, an insulating layer disposed on the channel region and formed of an electrically insulating material, a first reference electrode disposed at an edge of the upper portion of the insulating layer and a second reference electrode disposed to be spaced apart from the insulating layer.
126 Citations
25 Claims
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1. A field effect transistor for detecting ionic material, the field effect transistor comprising:
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a substrate formed of a semiconductor material; a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate; a channel region interposed between the source region and the drain region; an insulating layer disposed on the channel region and formed of an electrically insulating material; a first reference electrode disposed at an edge of the upper portion of the insulating layer; and a second reference electrode disposed to be spaced apart from the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of detecting ionic material, the method comprising:
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providing a sample solution used to detect the presence or concentration of ionic material to an insulating layer of a field effect transistor for detecting ionic material; and measuring electric signal changes of the field effect transistor; wherein the field effect transistor comprises; a substrate formed of a semiconductor material; a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate; a channel region interposed between the source region and the drain region; the insulating layer disposed on the channel region and formed of an electrically insulating material; a first reference electrode disposed at an edge of the upper portion of the insulating layer; and a second reference electrode disposed to be spaced apart from the insulating layer. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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Specification