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FIELD EFFECT TRANSISTOR FOR DETECTING IONIC MATERIAL AND METHOD OF DETECTING IONIC MATERIAL USING THE SAME

  • US 20070252176A1
  • Filed: 12/20/2006
  • Published: 11/01/2007
  • Est. Priority Date: 04/26/2006
  • Status: Active Grant
First Claim
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1. A field effect transistor for detecting ionic material, the field effect transistor comprising:

  • a substrate formed of a semiconductor material;

    a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate;

    a channel region interposed between the source region and the drain region;

    an insulating layer disposed on the channel region and formed of an electrically insulating material;

    a first reference electrode disposed at an edge of the upper portion of the insulating layer; and

    a second reference electrode disposed to be spaced apart from the insulating layer.

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