High voltage transistor and method for fabricating the same
First Claim
1. A high voltage transistor, comprising:
- an insulation layer on a substrate;
an N+-type drain junction region on the insulation layer;
an N−
-type drain junction region on the N+-type drain junction region;
a P−
-type body region provided in a trench region of the N−
-type drain junction region;
a plurality of gate patterns including a gate insulation layer and a gate conductive layer in other trench regions bordered by the P−
-type body region and the N−
-type drain junction region;
a plurality of source regions contacted to a source electrode on the P−
-type body region; and
a plurality of N+-type drain regions contacted to the N−
-type drain junction region and individual drain electrodes.
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Abstract
A high voltage transistor operating through a high voltage and a method for fabricating the same are provided. The high voltage transistor includes: an insulation layer on a substrate; an N+-type drain junction region on the insulation layer; an N−-type drain junction region on the N+-type drain junction region; a P−-type body region provided in a trench region of the N−-type drain junction region; a plurality of gate patterns including a gate insulation layer and a gate conductive layer in other trench regions bordered by the P−-type body region and the N−-type drain junction region; a plurality of source regions contacted to a source electrode on the P−-type body region; and a plurality of N+-type drain regions contacted to the N−-type drain junction region and individual drain electrodes.
48 Citations
4 Claims
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1. A high voltage transistor, comprising:
-
an insulation layer on a substrate;
an N+-type drain junction region on the insulation layer;
an N−
-type drain junction region on the N+-type drain junction region;
a P−
-type body region provided in a trench region of the N−
-type drain junction region;
a plurality of gate patterns including a gate insulation layer and a gate conductive layer in other trench regions bordered by the P−
-type body region and the N−
-type drain junction region;
a plurality of source regions contacted to a source electrode on the P−
-type body region; and
a plurality of N+-type drain regions contacted to the N−
-type drain junction region and individual drain electrodes. - View Dependent Claims (2)
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3. A high voltage transistor, comprising:
-
an insulation layer on a substrate;
a P+-type drain junction region on the insulation layer;
a P-type drain junction region on the P-type drain junction region;
an N−
-type body region provided in a trench region inside of the P−
-type drain junction region;
a plurality of gate patterns including a gate insulation layer and a gate conductive layer in other trench regions bordered by the N−
-type body region and the P−
-type drain junction region;
a plurality of source regions contacted to a source region on the N−
-type body region; and
a plurality of P+-type drain regions contacted to the P−
-type drain junction region and individual drain electrodes. - View Dependent Claims (4)
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Specification