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High voltage transistor and method for fabricating the same

  • US 20070252200A1
  • Filed: 06/15/2007
  • Published: 11/01/2007
  • Est. Priority Date: 09/08/2004
  • Status: Active Grant
First Claim
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1. A high voltage transistor, comprising:

  • an insulation layer on a substrate;

    an N+-type drain junction region on the insulation layer;

    an N

    -type drain junction region on the N+-type drain junction region;

    a P

    -type body region provided in a trench region of the N

    -type drain junction region;

    a plurality of gate patterns including a gate insulation layer and a gate conductive layer in other trench regions bordered by the P

    -type body region and the N

    -type drain junction region;

    a plurality of source regions contacted to a source electrode on the P

    -type body region; and

    a plurality of N+-type drain regions contacted to the N

    -type drain junction region and individual drain electrodes.

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