METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20070254456A1
• Filed: 04/13/2007
• Published: 11/01/2007
• Est. Priority Date: 04/28/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: JINBO, Yasuhiro, SHOJI, Hironobu, MARUYAMA, Junya
• Granted Patent: US 8,900,970 B2
• Time in Patent Office: Days
• US Class Current: 438/458
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: G02F 1/167 by electrophoresis
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: H01L 21/7806 involving the separation of the active layers from a substrate
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 71/80 using temporary substrates
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

A technique for peeling an element manufactured through a process at relatively low temperature (lower than 500° C.) from a substrate and transferring the element to a flexible substrate (typically, a plastic film). With the use of an existing manufacturing device for a large glass substrate, a molybdenum film (Mo film) is formed over a glass substrate, an oxide film is formed over the molybdenum film, and an element is formed over the oxide film through a process at relatively low temperature (lower than 500° C.). Then, the element is peeled from the glass substrate and transferred to a flexible substrate.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a molybdenum film over a substrate;

forming a molybdenum oxide film over the molybdenum film;

forming an insulating film over the molybdenum oxide film;

forming a semiconductor film having an amorphous structure over the insulating film;

separating the insulating film and the semiconductor film having an amorphous structure from the substrate; and

disposing the insulating film and the semiconductor film having an amorphous structure over a flexible substrate after the separation.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the molybdenum film is formed in contact with the substrate.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the molybdenum oxide film is formed in contact with the molybdenum film.

4. The method for manufacturing a semiconductor device according to claim 1, further comprising a step of partially performing laser light irradiation before the separation.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the substrate is selected from the group consisting of a glass substrate, a ceramic substrate, and a quartz substrate.

6. A method for manufacturing a semiconductor device, comprising the steps of:

forming a molybdenum film over a substrate;

forming a molybdenum oxide film over the molybdenum film;

forming an insulating film over the molybdenum oxide film;

forming a semiconductor film including an organic compound over the insulating film;

separating the insulating film and the semiconductor film including an organic compound from the substrate; and

disposing the insulating film and the semiconductor film including an organic compound over a flexible substrate after the separation.

7. The method for manufacturing a semiconductor device according to claim 6, wherein the molybdenum film is formed in contact with the substrate.

8. The method for manufacturing a semiconductor device according to claim 6, wherein the molybdenum oxide film is formed in contact with the molybdenum film.

9. The method for manufacturing a semiconductor device according to claim 6, further comprising a step of partially performing laser light irradiation before the separation.

10. The method for manufacturing a semiconductor device according to claim 6, wherein the substrate is selected from the group consisting of a glass substrate, a ceramic substrate, and a quartz substrate.

11. A method for manufacturing a semiconductor device, comprising the steps of:

forming a molybdenum film over a substrate;

forming a molybdenum oxide film over the molybdenum film;

forming an insulating film over the molybdenum oxide film;

forming a first electrode over the insulating film;

forming a light emitting layer over the first electrode;

forming a second electrode over the light emitting layer;

separating the insulating film, the first electrode, the light emitting layer, and the second electrode from the substrate; and

disposing the insulating film, the first electrode, the light emitting layer, and the second electrode over a flexible substrate after the separation.

12. The method for manufacturing a semiconductor device according to claim 11, wherein the molybdenum film is formed in contact with the substrate.

13. The method for manufacturing a semiconductor device according to claim 11, wherein the molybdenum oxide film is formed in contact with the molybdenum film.

14. The method for manufacturing a semiconductor device according to claim 11, further comprising a step of partially performing laser light irradiation before the separation.

15. The method for manufacturing a semiconductor device according to claim 11, wherein the substrate is selected from the group consisting of a glass substrate, a ceramic substrate, and a quartz substrate.

16. The method for manufacturing a semiconductor device according to claim 11, wherein the light emitting layer comprises an organic compound or an inorganic compound.

17. A method for manufacturing a semiconductor device, comprising the steps of:

forming a molybdenum film over a substrate;

forming a molybdenum oxide film over the molybdenum film;

forming a conductive layer over the molybdenum oxide film by a printing method;

baking the conductive layer;

forming an insulating film to cover the conductive layer;

separating the insulating film and the conductive layer from the substrate; and

disposing the insulating film and the conductive layer over a flexible substrate after the separation.

18. The method for manufacturing a semiconductor device according to claim 17, wherein the conductive layer is an antenna.

19. The method for manufacturing a semiconductor device according to claim 17, wherein the conductive layer is formed in contact with the molybdenum oxide film.

20. The method for manufacturing a semiconductor device according to claim 17, wherein the molybdenum film is formed in contact with the substrate.

21. The method for manufacturing a semiconductor device according to claim 17, wherein the molybdenum oxide film is formed in contact with the molybdenum film.

22. The method for manufacturing a semiconductor device according to claim 17, further comprising a step of partially performing laser light irradiation before the separation.

23. The method for manufacturing a semiconductor device according to claim 17, wherein the substrate is selected from the group consisting of a glass substrate, a ceramic substrate, and a quartz substrate.