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METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20070254456A1
  • Filed: 04/13/2007
  • Published: 11/01/2007
  • Est. Priority Date: 04/28/2006
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a molybdenum film over a substrate;

    forming a molybdenum oxide film over the molybdenum film;

    forming an insulating film over the molybdenum oxide film;

    forming a semiconductor film having an amorphous structure over the insulating film;

    separating the insulating film and the semiconductor film having an amorphous structure from the substrate; and

    disposing the insulating film and the semiconductor film having an amorphous structure over a flexible substrate after the separation.

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