Semiconductor Device

• US 20070258221A1
• Filed: 09/05/2005
• Published: 11/08/2007
• Est. Priority Date: 09/10/2004
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Yamazaki, Shunpei
• Granted Patent: US 7,658,333 B2
• Time in Patent Office: Days
• US Class Current: 361/737
• CPC Class Codes: G06K 19/07345 by activating or deactivating at least a part of the circuit on the record carrier, e.g. ON/OFF switches
• CPC Class Codes: Y10S 257/91 Diode arrays, e.g. diode read-only memory array

Abstract

A semiconductor device used as an ID chip is provided, of which operation is terminated when its role is finished or expires. According to the invention, an antenna circuit, a voltage detecting circuit, a current amplifier circuit, a signal processing circuit, and a fuse are provided over an insulating substrate. When large power is applied to the antenna circuit, a voltage is detected by voltage detecting circuit and a corresponding current is amplified by the current amplifier circuit, thereby the fuse is melted down. Also, when an anti-fuse is used, the anti-fuse can short an insulating film by applying an excessive voltage. In this manner, the semiconductor device has a function for making it invalid by stopping operation of the signal processing circuit when the role of the device is finished or expires.

Claims

1. A semiconductor device comprising:

an antenna circuit;

a voltage detecting circuit;

a current amplifier circuit;

a signal processing circuit; and

a fuse having at least a first terminal and a second terminal,

wherein the antenna circuit is electrically connected to the signal processing circuit through at least the fuse,

wherein the voltage detecting circuit is electrically connected to the antenna circuit;

wherein the current amplifier circuit is connected to the voltage detecting circuit and the second terminal of the fuse; and

wherein the signal processing circuit is connected to the second terminal of the fuse.

2. The semiconductor device according to claim 1, wherein the signal processing circuit includes a rectifier circuit and a modulating circuit.

3. The semiconductor device according to claim 1, wherein the voltage detecting circuit includes a diode.

4. The semiconductor device according to claim 1, wherein the voltage detecting circuit includes a comparator.

5. The semiconductor device according to claim 1, wherein the current amplifier circuit includes a current mirror circuit.

6. The semiconductor device according to claim 1, wherein a fuse element constituting the fuse is melted down by flowing an excessive current thereto.

7. The semiconductor device according to claim 6, wherein the fuse element is formed using a metal wiring.

8. The semiconductor device according to claim 6, wherein the fuse element is formed using a semiconductor thin film.

15. The semiconductor device according to claim 1 or 9, wherein the signal processing circuit is formed over a glass substrate.

16. The semiconductor device according to claim 1 or 9, wherein the signal processing circuit is formed over a plastic substrate.

17. The semiconductor device according to claim 1 or 9, wherein the signal processing circuit is formed over an insulating film.

18. The semiconductor device according to claim 1 or 9, wherein the antenna circuit is provided above or partially above the signal processing circuit.

19. The semiconductor device according to claim 1 or 9, wherein a signal inputted to the antenna circuit is a radio signal.

20. An IC card, an IC tag, an RFID, a transponder, paper money, valuable securities, a passport, an electronic device, a bag, and clothes, comprising the semiconductor device according to claim 1 or 9.

9. A semiconductor device comprising:

an antenna circuit;

a signal processing circuit; and

an anti-fuse,

wherein an output of the antenna circuit is connected to the signal processing circuit and the anti-fuse.

10. The semiconductor device according to claim 9, wherein the signal processing circuit includes a rectifier circuit and a modulating circuit.

11. The semiconductor device according to claim 9, wherein an anti-fuse element constituting the anti-fuse shorts an insulating film by applying an excessive voltage thereto.

12. The semiconductor device according to claim 11, wherein the anti-fuse element has a pair of conductive layers and the insulating film interposed between the pair of conductive layers.

13. The semiconductor device according to claim 9, wherein an anti-fuse element constituting the anti-fuse uses a diode, and shorts a junction portion of the diode by applying an excessive voltage thereto.

14. The semiconductor device according to claim 13, wherein the anti-fuse element is the diode and the diode has the junction portion.