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Magnetic memory device

  • US 20070258281A1
  • Filed: 11/30/2006
  • Published: 11/08/2007
  • Est. Priority Date: 05/04/2006
  • Status: Active Grant
First Claim
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1. A method of writing to a magnetic memory device comprising first and second leads, and a magnetoresistive multilayer structure arranged between said leads, said multilayer structure exhibiting a first, relatively high resistance state and a second, relatively low resistance state, the multilayer structure being switchable from the first state to the second state in response to a pulse of given duration and magnitude, the pulse magnitude being a current threshold magnitude which is a minimum current magnitude needed to switch the multilayer structure and which is dependent upon the duration of the pulse, the method comprising:

  • passing a current through the multilayer structure of first magnitude less than said threshold current magnitude, andincreasing the current through the multilayer structure thereby passing a current of second, higher magnitude which is less than said threshold current magnitude.

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