MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, AND MAGNETIC REPRODUCING APPARATUS

• US 20070259213A1
• Filed: 04/30/2007
• Published: 11/08/2007
• Est. Priority Date: 09/11/2002
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sahashi, Masashi, Koui, Katsuhiko, Iwasaki, Hitoshi, HASHIMOTO, Susumu
• Application Number:
  US11/741,900
• Publication Number:
  US 20070259213A1
• Time in Patent Office: Days
• US Class Current: 428/811.200
• CPC Class Codes: G11B 5/3906 Details related to the use of magnetic thin film layers or to their effects
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: Y10T 428/1121 Multilayer

Abstract

A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.

Claims

1. A method of manufacturing a magnetoresistance effect element comprising a magnetoresistance effect film including a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers, a pair of electrodes electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film, comprising:

distributing first and second phases in a film plane by inducing a phase separation in a layer made of an alloy including a plurality of elements.

2. The method of manufacturing a magnetoresistance effect element according to claim 1, further comprising:

making at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon react preferentially with one of the first and second phases.

3. The method of manufacturing a magnetoresistance effect element according to claim 2, wherein making radical of the element to make the element react with the one of the first and second phases.