Nitride semiconductor light emitting element

• US 20070262293A1
• Filed: 03/13/2007
• Published: 11/15/2007
• Est. Priority Date: 05/12/2006
• Status: Active Grant

• Current Assignee: Sumitomo Chemical Company Limited
• Original Assignee: Hitachi Cable Limited (Proterial Ltd.)
• Inventors: Fujikura, Hajime
• Granted Patent: US 7,663,138 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer are laminated on a substrate to provide a nitride semiconductor light emitting element. A composition of the InGaN barrier included in the multiquantum well active layer is expressed by In_xGa_1-xN (0.04≦x≦0.1), and a total thickness of InGaN layers comprising an In composition ratio within a range of 0.04 to 0.1 in the light emitting element including the InGaN barrier layers is not greater than 60 nm.

Claims

1. A nitride semiconductor light emitting element, comprising:

a substrate; and

a n-type layer, a multiquantum well active layer comprising a plurality of pairs of an InGaN well layer/InGaN barrier layer, and a p-type layer laminated on the substrate;

wherein;

a composition of the InGaN barrier included in the multiquantum well active layer is expressed by In_xGa_1-xN (0.04≦

x≦

0.1), and a total thickness of InGaN layers comprising an In composition ratio in a range of 0.04 to 0.1 in the light emitting element including the InGaN barrier layer is not greater than 60 nm.

2. The nitride semiconductor light emitting element, according to claim 1, wherein:

an emission light peak wavelength of the multiquantum well active layer is in a range of 430 to 560 nm.

3. The nitride semiconductor light emitting element, according to claim 1, wherein:

a thickness of the InGaN barrier layer is in a range of 5 to 20 nm.

4. The nitride semiconductor light emitting element, according to claim 1, further comprising:

an InGaN layer with an In composition ratio in a range of 0.04 to 0.1 that is interposed between the multiquantum well active layer and the n-type layer.

5. The nitride semiconductor light emitting element, according to claim 1, wherein:

the multiquantum well active layer is formed on a GaN layer or an Al_yGa_1-yN layer (0<

y<

0.5) that is formed on the substrate.

6. The nitride semiconductor light emitting element, according to claim 1, wherein:

the substrate comprises a single crystal substrate comprising one material selected from a group consisting of sapphire, Ga₂O₃, SiC, Si, GaN, and AlN.