Semiconductor Device and Method for Manufacturing the Same
First Claim
1. A semiconductor device comprising:
- an element formation layer including a transistor provided over a substrate;
an insulating film provided over the element formation layer, wherein a groove is provided in the insulating film;
an antenna including a conductive film electrically connected to the transistor; and
a protection film provided over the conductive film, wherein the conductive film is provided over at least the groove of the insulating film so as to have a concave cross-sectional shape.
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Accused Products
Abstract
An object of the prevent invention is to provide a semiconductor device having a conductive film, which sufficiently serves as an antenna, and a method for manufacturing thereof. The semiconductor device has an element formation layer including a transistor, which is provided over a substrate, an insulating film provided on the element formation layer, and a conductive film serving as an antenna, which is provided on the insulating film. The insulating film has a groove. The conductive film is provided along the surface of the insulating film and the groove. The groove of the insulating film may be provided to pass through the insulating film. Alternatively, a concave portion may be provided in the insulating film so as not to pass through the insulating film. A structure of the groove is not particularly limited, and for example, the groove can be provided to have a tapered shape, etc.
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Citations
18 Claims
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1. A semiconductor device comprising:
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an element formation layer including a transistor provided over a substrate;
an insulating film provided over the element formation layer, wherein a groove is provided in the insulating film;
an antenna including a conductive film electrically connected to the transistor; and
a protection film provided over the conductive film, wherein the conductive film is provided over at least the groove of the insulating film so as to have a concave cross-sectional shape. - View Dependent Claims (6, 7, 8, 9)
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2. A semiconductor device comprising:
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an element formation layer including a transistor provided over a substrate;
an insulating film provided over the element formation layer, wherein a groove is provided in the insulating film so as to expose the element formation layer;
an antenna including a conductive film electrically connected to the transistor; and
a protection film provided over the conductive film, wherein the conductive film is provided over the groove and a portion of the insulating film so as to have a concave cross-sectional shape.
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3. A semiconductor device comprising:
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an element formation layer including a transistor provided over a substrate; and
an antenna formation layer including an insulating film and a conductive film, wherein a groove is provided in the insulating film, wherein the conductive film is provided over at least the groove of the insulating film so as to have a concave cross-sectional shape, wherein the element formation layer and the antenna formation layer are attached to each other, and wherein the transistor and the conductive film are electrically connected to each other. - View Dependent Claims (5)
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4. A semiconductor device comprising:
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an element formation layer including a transistor provided over a substrate;
an insulating film provided over the element formation layer, wherein a groove is provided in the insulating film; and
an antenna including a conductive film electrically connected to the transistor, wherein the conductive film is provided over the groove and a portion of the insulating film, and wherein a thickness of the conductive film provided over the groove is different from that provided over the portion of the insulating film.
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10. A method for manufacturing a semiconductor device comprising:
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forming an element formation layer including a transistor over a substrate;
forming an insulating film over the element formation layer;
forming a groove in the insulating film by selectively removing the insulating film;
forming a conductive film over the insulating film and the groove;
forming a pattern of the conductive film by selectively removing a part of the conductive film; and
forming a protection film to cover the pattern of the conductive film. - View Dependent Claims (15, 16, 17, 18)
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11. A method for manufacturing a semiconductor device comprising:
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forming a separation layer over a substrate;
forming an element formation layer including a transistor over the separation layer;
forming an insulating film over the element formation layer;
forming a groove in the insulating film by selectively removing the insulating film;
forming a conductive film over the insulating film and the groove;
forming a pattern of the conductive film by selectively removing a part of the conductive film;
forming a protection film to cover the pattern of the conductive film;
forming an opening by selectively removing the protection film, the insulating film and the element formation layer to expose the separation layer through the opening; and
separating the element formation layer from the substrate.
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12. A method for manufacturing a semiconductor device comprising:
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forming a separation layer over a first substrate;
forming an element formation layer including a transistor over the separation layer;
forming an insulating film over the element formation layer;
forming a groove in the insulating film by selectively removing the insulating film;
forming a conductive film over the insulating film and the groove;
forming a pattern of the conductive film by selectively removing a part of the conductive film;
forming a protection film to cover the pattern of the conductive film;
forming an opening by selectively removing the protection film, the insulating film and the element formation layer to expose the separation layer through the opening;
attaching a second substrate to a surface of the protection film; and
separating the element formation layer from the first substrate. - View Dependent Claims (13, 14)
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Specification