SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING
First Claim
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1. A semiconductor device comprising:
- a semiconductor layer of a first conductivity type;
a plurality of trenches provided on a major surface side of the semiconductor layer;
an insulating film provided on an inner wall surface and on top of the trench;
a conductive material surrounded by the insulating film and filling the trench;
a first semiconductor region of a second conductivity type provided between the trenches;
a second semiconductor region of the first conductivity type provided in a surface portion of the first semiconductor region;
a mesa of the semiconductor layer provided between the trenches of a Schottky barrier diode region adjacent to a transistor region including the first semiconductor region and the second semiconductor region;
a control electrode connected to the conductive material filling the trench of the transistor region; and
a main electrode provided in contact with a surface of the first semiconductor region, the second semiconductor region, a surface of the mesa and a part of the conductive material filling the trench of the Schottky barrier diode region, the part being exposed through the insulating film.
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Abstract
A semiconductor device includes: a semiconductor layer of a first conductivity type, a plurality of trenches provided on a major surface side of the semiconductor layer, an insulating film provided on an inner wall surface and on top of the trench, a conductive material surrounded by the insulating film and filling the trench, a first semiconductor region of a second conductivity type provided between the trenches, a second semiconductor region of the first conductivity type provided in a surface portion of the first semiconductor region, a mesa of the semiconductor layer provided between the trenches of a Schottky barrier diode region adjacent to a transistor region including the first semiconductor region and the second semiconductor region, a control electrode connected to the conductive material filling the trench of the transistor region and a main electrode provided in contact with a surface of the first semiconductor region, the second semiconductor region, a surface of the mesa and a part of the conductive material filling the trench of the Schottky barrier diode region. The part is exposed through the insulating film.
24 Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor layer of a first conductivity type;
a plurality of trenches provided on a major surface side of the semiconductor layer;
an insulating film provided on an inner wall surface and on top of the trench;
a conductive material surrounded by the insulating film and filling the trench;
a first semiconductor region of a second conductivity type provided between the trenches;
a second semiconductor region of the first conductivity type provided in a surface portion of the first semiconductor region;
a mesa of the semiconductor layer provided between the trenches of a Schottky barrier diode region adjacent to a transistor region including the first semiconductor region and the second semiconductor region;
a control electrode connected to the conductive material filling the trench of the transistor region; and
a main electrode provided in contact with a surface of the first semiconductor region, the second semiconductor region, a surface of the mesa and a part of the conductive material filling the trench of the Schottky barrier diode region, the part being exposed through the insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for manufacturing a semiconductor device comprising:
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forming a plurality of trenches on a major surface side of a semiconductor layer of a first conductivity type;
forming a first insulating film on an inner wall surface of the trench;
burying a conductive material in the trench with the first insulating film formed on the inner wall surface;
forming a first semiconductor region of a second conductivity type between the trenches of a transistor region;
forming a second semiconductor region of the first conductivity type in a surface portion of the first semiconductor region;
partially exposing the conductive material of a Schottky barrier diode region adjacent to the transistor region and forming a second insulating film overlying the conductive material in the trench; and
forming a main electrode in contact with a surface of the second semiconductor region, the partially exposed conductive material in the Schottky barrier diode region, and the semiconductor layer between the trenches of the Schottky barrier diode region.
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20. A method for manufacturing a semiconductor device comprising:
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forming a plurality of trenches on a major surface side of a semiconductor layer of a first conductivity type;
forming a first insulating film on an inner wall surface of the trench;
burying a conductive material in the trench with the first insulating film formed on the inner wall surface;
forming a first semiconductor region of a second conductivity type between the trenches of a transistor region;
forming a second semiconductor region of the first conductivity type in a surface portion of the first semiconductor region;
forming a second insulating film overlying the conductive material in the trench;
forming a contact groove crossing the trench of a Schottky barrier diode region adjacent to the transistor region so as to expose the first semiconductor region through the second semiconductor region and to expose the conductive material of the Schottky barrier diode region through the second insulating film; and
forming a main electrode that fills the contact groove and is in contact with a surface of the semiconductor layer between the trenches of the Schottky barrier diode region.
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Specification
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsYamaguchi, Yoshihiro, Kawaguchi, Yusuke, Akiyama, Miwako, Ono, Syotaro
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Application NumberUS11/742,133Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current257/499CPC Class CodesH01L 27/0727 in combination with diodes,...H01L 29/66143 Schottky diodesH01L 29/872 Schottky diodesH01L 29/8725 of the trench MOS barrier t...
