Display device

• US 20070263133A1
• Filed: 01/03/2007
• Published: 11/15/2007
• Est. Priority Date: 03/26/1997
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Granted Patent: US 7,436,463 B2
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/133334 Electromagnetic shields
• CPC Class Codes: G02F 1/133385 with cooling means, e.g. fans
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence

Abstract

There is disclosed a structure for radiating heat generated by TFTs in a liquid crystal panel. A DLC film 125 is provided on a resin interlayer film 123 disposed on the TFTs 105, 109, and 113. The DLC film 125 can be easily formed on the resin film, and has high heat conductivity, so that the film can be made to function as a heat radiating layer.

Claims

1. A display device comprising:

a substrate;

a thin film transistor formed over the substrate;

a first insulating film formed over the thin film transistor, the first insulating film having a first contact hole;

an electrode formed over the first insulating film, the electrode being in contact with one of a source region or a drain region of the thin film transistor through the first contact hole;

a second insulating film formed over the electrode, the second insulating film comprising silicon nitride and having a second contact hole; and

a pixel electrode formed over the second insulating film, the pixel electrode being in contact with the electrode through the second contact hole,

wherein the second contact hole is overlapped with the first contact hole.

4. The display device according to claim 1, wherein the thin film transistor is a top-gate type thin film transistor.

7. The display device according to claim 1, wherein the electrode comprises a titanium film, an aluminum film and a titanium film.

10. The display device according to claim 1, wherein the first insulating film comprises silicon oxide film.

13. The display device according to claim 1, wherein the pixel electrode is a reflecting pixel electrode.

16. The display device according to claim 1, wherein the display device is a liquid crystal panel.

19. An electric device having the display device according to claim 1, wherein the electric device is one selected from the group consisting of a portable information processing terminal, a head mount display, a portable telephone, a video camera and a projector.

22. The display device according to claim 1, further comprising:

a light emitting layer formed over the pixel electrode.

25. The display device according to claim 22, wherein the display device is an EL display.

2. A display device comprising:

a substrate;

a thin film transistor formed over the substrate;

a first insulating film formed over the thin film transistor, the first insulating film having a first contact hole;

an electrode formed over the first insulating film, the electrode being in contact with one of a source region or a drain region of the thin film transistor through the first contact hole;

a second insulating film formed over the electrode, the second insulating film comprising silicon nitride and having a second contact hole;

a third insulating film formed over the second insulating film, the third insulating film comprising an organic resin and having a third contact hole; and

a pixel electrode formed over the third insulating film, the pixel electrode being in contact with the electrode through the second contact hole and the third contact hole,

wherein the second contact hole and the third contact hole are overlapped with the first contact hole.

5. The display device according to claim 2, wherein the thin film transistor is a top-gate type thin film transistor.

8. The display device according to claim 2, wherein the electrode comprises a titanium film, an aluminum film and a titanium film.

11. The display device according to claim 2, wherein the first insulating film comprises silicon oxide film.

14. The display device according to claim 2, wherein the pixel electrode is a reflecting pixel electrode.

17. The display device according to claim 2, wherein the display device is a liquid crystal panel.

20. An electric device having the display device according to claim 2, wherein the electric device is one selected from the group consisting of a portable information processing terminal, a head mount display, a portable telephone, a video camera and a projector.

23. The display device according to claim 2, further comprising:

a light emitting layer formed over the pixel electrode.

26. The display device according to claim 23, wherein the display device is an EL display.

28. The display device according to claim 2, wherein the organic resin is one selected from the group consisting of polyimide, polyimideamide, polyamide, acryl and epoxy.

3. A display device comprising:

a substrate;

a thin film transistor formed over the substrate;

a first insulating film formed over the thin film transistor, the first insulating film having a first contact hole;

an electrode formed over the first insulating film, the electrode being in contact with one of a source region or a drain region of the thin film transistor through the first contact hole;

a second insulating film formed over the electrode, the second insulating film comprising silicon nitride and having a second contact hole;

a third insulating film formed over the second insulating film, the third insulating film having a third contact hole; and

a pixel electrode formed over the third insulating film, the pixel electrode being in contact with the electrode through the second contact hole and the third contact hole,

wherein the second contact hole and the third contact hole are overlapped with the first contact hole, and

wherein size of the third contact hole is larger than that of the second contact hole.

6. The display device according to claim 3, wherein the thin film transistor is a top-gate type thin film transistor.

9. The display device according to claim 3, wherein the electrode comprises a titanium film, an aluminum film and a titanium film.

12. The display device according to claim 3, wherein the first insulating film comprises silicon oxide film.

15. The display device according to claim 3, wherein the pixel electrode is a reflecting pixel electrode.

18. The display device according to claim 3, wherein the display device is a liquid crystal panel.

21. An electric device having the display device according to claim 3, wherein the electric device is one selected from the group consisting of a portable information processing terminal, a head mount display, a portable telephone, a video camera and a projector.

24. The display device according to claim 3, further comprising:

a light emitting layer formed over the pixel electrode.

27. The display device according to claim 24, wherein the display device is an EL display.

29. The display device according to claim 3, wherein the third insulating film comprises a diamond-like carbon film.