Cleaining Process and Operating Process for a Cvd Reactor
First Claim
1. Process for cleaning the reaction chamber of a hot-wall CVD reactor, the walls of the chamber being lined with a protective layer of silicon carbide, tantalum carbide or niobium carbide, comprising the steps of:
- heating the walls of the chamber to a temperature not lower than that for start of sublimation of the material to be removed; and
introducing a gas flow into the chamber.
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Abstract
The present invention relates to a process for cleaning the reaction chamber (12) of a CVD reactor, comprising the steps of heating the chamber walls to a suitable temperature and introducing a gas flow into the chamber, this cleaning process may be advantageously used within an operating process of a CVD reactor for depositing semiconductor material onto substrates inside a chamber; this operating process envisages a growth process comprising the sequential and cyclical loading of the substrates into the chamber (12), deposition of semiconductor material onto the substrates and unloading of the substrates from the chamber (12); after unloading a process for cleaning the chamber (12) is performed. The invention also relates to process for cleaning the entire CVD reactor, which envisages, together with heating, the presence of chemical etching components in the gas flow.
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Citations
22 Claims
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1. Process for cleaning the reaction chamber of a hot-wall CVD reactor, the walls of the chamber being lined with a protective layer of silicon carbide, tantalum carbide or niobium carbide, comprising the steps of:
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heating the walls of the chamber to a temperature not lower than that for start of sublimation of the material to be removed; and
introducing a gas flow into the chamber. - View Dependent Claims (2, 3, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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4. Process for cleaning a hot-wall CVD reactor, the walls of the reactor being lined with a protective layer of silicon carbide, tantalum carbide or niobium carbide, comprising the steps of:
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heating the walls of the reactor, the heating temperature for the reactor walls being not lower than that for start of sublimation of the material to be removed; and
introducing a gas flow in contact with the walls of the reactor to be cleaned, said gas comprising at least one component which is reactive in relation to said material to be removed.
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Specification