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Protruded contact and insertion of inter-layer-dielectric material to match damascene hardmask to improve undercut for low-k interconnects

  • US 20070264820A1
  • Filed: 05/15/2006
  • Published: 11/15/2007
  • Est. Priority Date: 05/15/2006
  • Status: Active Grant
First Claim
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1. A method of fabrication of an interconnect opening for a semiconductor device;

  • comprising the steps of;

    forming a lower interconnect and an insulating layer over a semiconductor structure;

    a portion of said lower interconnect is exposed;

    forming a first hardmask over said lower interconnect and said insulating layer;

    forming a dielectric layer over said first hardmask layer;

    forming a second hardmask over said dielectric layer;

    etching an interconnect opening in said first hardmask, said dielectric layer and said second hardmask layer;

    forming an interconnect in said interconnect opening.

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