Semiconductor device manufacturing apparatus and method of using the same

• US 20070266946A1
• Filed: 11/07/2006
• Published: 11/22/2007
• Est. Priority Date: 05/22/2006
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Byung-Chul
• Application Number:
  US11/593,493
• Publication Number:
  US 20070266946A1
• Time in Patent Office: Days
• US Class Current: 118/723.ER
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A semiconductor device manufacturing apparatus and a method for use in the manufacturing of such devices minimize the amount of particles which accumulate in the process chamber of the apparatus and clean the interior of the process chamber with a high degree of effectiveness. The semiconductor device manufacturing apparatus has a showerhead located at an upper portion of the process chamber, a plate-like gas diffuser disposed in the showerhead, and both a fluid supply line and a plasma waveguide connected to the showerhead. After a substrate is processed in the process chamber using process gas delivered to the showerhead through the fluid supply line, plasma is supplied into the upper portion of the process chamber from a remote plasma reactor via the plasma waveguide.

Claims

1. A manufacturing apparatus for processing substrates, comprising:

a process chamber;

a process fluid supply unit including a fluid supply line, and a showerhead disposed at an upper portion of the process chamber and to which the fluid supply line is connected whereby the showerhead injects fluid fed through the fluid supply line into the process chamber; and

a plasma supply unit including a remote plasma reactor disposed outside of the process chamber, and a plasma supply line connected to the remote plasma reactor and to the process chamber, the plasma supply line having an open end disposed at the upper portion of the process chamber such that plasma generated by the remote plasma reactor is injected downward into the process chamber from the upper portion of the process chamber.

2. The manufacturing apparatus according to claim 1, wherein the process fluid supply unit further includes a diffuser disposed in the showerhead to diffuse gas fed through the process fluid supply line throughout the showerhead before the gas is injected by the showerhead into the process chamber.

3. The manufacturing apparatus according to claim 2, wherein the diffuser consists of a plate having passageways extending straight therethrough.

4. The manufacturing apparatus according to claim 3, wherein the process chamber comprises a lid forming the top thereof, and the showerhead of the process supply unit is mounted to the lid of the process chamber.

5. The manufacturing apparatus according to claim 4, wherein the end of the plasma supply line of the plasma supply unit is attached to the lid of the process chamber along with the showerhead.

6. The manufacturing apparatus according to claim 5, wherein the plasma supply line is a waveguide.

7. A manufacturing apparatus for processing substrates, comprising:

a process chamber;

a process fluid supply unit including a process gas supply source having at least one source of gas used in the processing of a substrate within the process chamber, a fluid supply line, and a showerhead disposed at an upper portion of the process chamber and to which the fluid supply line is connected whereby the showerhead injects fluid fed through the fluid supply line from the process gas supply source into the process chamber; and

a plasma supply unit including a remote plasma reactor disposed outside of the process chamber, and a plasma supply line connected to the remote plasma reactor and to the process chamber, the plasma supply line having an open end disposed at the upper portion of the process chamber such that plasma generated by the remote plasma reactor is injected downward into the process chamber from the upper portion of the process chamber.

8. The manufacturing apparatus according to claim 7, wherein the process chamber comprises a lid forming the top thereof, and the showerhead of the process supply unit is mounted to the lid of the process chamber.

9. The manufacturing apparatus according to claim 8, wherein the end of the plasma supply line of the plasma supply unit is attached to the lid of the process chamber along with the showerhead.

10. The manufacturing apparatus according to claim 9, wherein the process fluid supply unit further includes a diffuser disposed in the showerhead to diffuse gas fed through the process fluid supply line throughout the showerhead before the gas is injected by the showerhead into the process chamber.

11. The manufacturing apparatus according to claim 10, wherein the diffuser consists of a plate having passageways extending straight therethrough.

12. The manufacturing apparatus according to claim 11, wherein the plasma supply line is a waveguide.

13. The manufacturing apparatus according to claim 7, further comprising:

an upper electrode disposed in the process chamber;

a lower electrode disposed below the upper electrode in the process chamber; and

RF power supplies connected to the electrodes, respectively.

14. The manufacturing apparatus according to claim 11, wherein the process gas supply source includes a source of TEOS.

15. A substrate processing method comprising:

supporting a substrate in a lower portion of a process chamber;

subsequently injecting a processing medium comprising gas into the process chamber from an upper portion of the process chamber, and processing the substrate using the processing medium;

subsequently cleaning the interior of the process chamber by generating a cleaning plasma outside the process chamber, and injecting the cleaning plasma into the process chamber from the upper portion of the process chamber.

17. The method according to claim 15, wherein the injecting of the processing medium into the process chamber comprises delivering the processing medium into a showerhead disposed at the upper portion of the process chamber, and the injecting of the cleaning plasma into the process chamber also comprises delivering the cleaning plasma into the showerhead, whereby the cleaning plasma cleans the showerhead in addition to the interior of the process chamber.

18. The method according to claim 17, further comprising diffusing the processing medium in the showerhead by delivering the processing medium onto a diffuser consisting of a plate disposed within the showerhead, the plate having passageways extending straight therethrough, and wherein the cleaning plasma is also delivered to the diffuser, whereby the cleaning plasma cleans the diffuser in addition to the showerhead and the interior of the process chamber.

20. The method according to claim 15, wherein the injecting of the processing medium into the process chamber comprises delivering TEOS to the showerhead.

16. The method according to claim 16, wherein the processing of the substrate using the processing medium comprises exciting the process gas within the process chamber to convert the process gas into a plasma within the process chamber.

19. The method according to claim 16, wherein the injecting of the processing medium into the process chamber comprises delivering the processing medium into a showerhead disposed at the upper portion of the process chamber, and the injecting of the cleaning plasma into the process chamber also comprises delivering the cleaning plasma into the showerhead, whereby the cleaning plasma cleans the showerhead in addition to the interior of the process chamber.