SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
First Claim
1. A semiconductor device comprising:
- a first semiconductor layer of a first conductivity type;
a second semiconductor layer of a second conductivity type provided on the first semiconductor layer;
a plurality of first trenches passing through the second semiconductor layer and reaching the first semiconductor layer;
a gate insulating film provided on an inner wall of the first trench; and
a gate electrode filling in the first trench via the gate insulating film,a PN junction interface being provided between the first semiconductor layer and the second semiconductor layer, anda distance from an upper face of the second semiconductor layer to the PN junction interface being minimized nearly at a center between the first trenches.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer; a plurality of first trenches passing through the second semiconductor layer and reaching the first semiconductor layer; a gate insulating film provided on an inner wall of the first trench; and a gate electrode filling in the first trench via the gate insulating film. A PN junction interface is provided between the first semiconductor layer and the second semiconductor layer. A distance from an upper face of the second semiconductor layer to the PN junction interface is minimized nearly at a center between the first trenches.
-
Citations
15 Claims
-
1. A semiconductor device comprising:
-
a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer; a plurality of first trenches passing through the second semiconductor layer and reaching the first semiconductor layer; a gate insulating film provided on an inner wall of the first trench; and a gate electrode filling in the first trench via the gate insulating film, a PN junction interface being provided between the first semiconductor layer and the second semiconductor layer, and a distance from an upper face of the second semiconductor layer to the PN junction interface being minimized nearly at a center between the first trenches. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A semiconductor device comprising:
-
a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type provided on the first semiconductor layer; a plurality of first trenches passing through the second semiconductor layer and reaching the first semiconductor layer; a gate insulating film provided on an inner wall of the first trench; a gate electrode filling in the first trench via the gate insulating film; a plurality of first diffusion regions of the first conductivity type selectively provided in the upper surface of the second semiconductor layer; and a contact region of the second conductivity type provided between the first diffusion regions in the second semiconductor layer, a PN junction interface being provided between the first semiconductor layer and the second semiconductor layer, and the PN junction interface having a protruding feature at a position corresponding to the contact region. - View Dependent Claims (7, 8, 9)
-
-
10. A method for manufacturing a semiconductor device comprising:
-
forming a first insulating film on an upper face of a first semiconductor crystal layer of a first conductivity type; forming a plurality of first openings in the first insulating film and then partially removing the first semiconductor crystal layer exposed in the first openings to form a plurality of first trenches; setting back the first insulating film having the first openings to form a second insulating film and to expose an upper corner of the first trench; forming a gate insulating film on an inner wall of the first trench; filling in the first trench with a gate electrode material via the gate insulating film; introducing a first dopant of a second conductivity type and a second dopant of the first conductivity type into the corner and the gate electrode material, respectively, by ion implantation from above the first semiconductor crystal layer using the second insulating film as a mask; and thermally diffusing the first dopant and the second dopant introduced into the corner and the gate electrode material to convert the gate electrode material into a conductor of the first conductivity type, to form a second semiconductor layer of the second conductivity type in the first semiconductor crystal layer, and to form a diffusion region of the first conductivity type in the corner. - View Dependent Claims (11, 12, 13, 14, 15)
-
Specification