Top layers of metal for high performance IC's
First Claim
Patent Images
1. An integrated circuit chip comprising:
- a silicon substrate;
multiple devices in and on said silicon substrate;
a first dielectric layer over said silicon substrate;
a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said multiple devices, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, and wherein said metallization structure comprises electroplated copper;
a second dielectric layer between said first and second metal layers;
a passivation layer over said metallization structure and over said first and second dielectric layers, a first opening in said passivation layer exposing a pad of said metallization structure; and
a metal contact over said pad, wherein said metal contact comprises electroless nickel.
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Abstract
A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.
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Citations
22 Claims
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1. An integrated circuit chip comprising:
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a silicon substrate;
multiple devices in and on said silicon substrate;
a first dielectric layer over said silicon substrate;
a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said multiple devices, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, and wherein said metallization structure comprises electroplated copper;
a second dielectric layer between said first and second metal layers;
a passivation layer over said metallization structure and over said first and second dielectric layers, a first opening in said passivation layer exposing a pad of said metallization structure; and
a metal contact over said pad, wherein said metal contact comprises electroless nickel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An integrated circuit chip comprising:
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a silicon substrate;
multiple devices in and on said silicon substrate;
a first dielectric layer over said silicon substrate;
a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said multiple devices, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, and wherein said metallization structure comprises electroplated copper;
a second dielectric layer between said first and second metal layers;
a passivation layer over said metallization structure and over said first and second dielectric layers, a first opening in said passivation layer exposing a contact point of said metallization structure;
a metal contact over said contact point, wherein said metal contact comprises electroless nickel; and
a wirebonding interconnect pad connected to said contact point through said metal contact. - View Dependent Claims (12, 13, 14, 15, 16)
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17. An integrated circuit chip comprising:
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a silicon substrate;
multiple devices in and on said silicon substrate;
a first dielectric layer over said silicon substrate;
a metallization structure over said first dielectric layer, wherein said metallization structure is connected to said multiple devices, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, and wherein said metallization structure comprises electroplated copper;
a second dielectric layer between said first and second metal layers;
a passivation layer over said metallization structure and over said first and second dielectric layers, a first opening in said passivation layer exposing a contact point of said metallization structure;
a metal contact over said contact point, wherein said metal contact comprises electroless nickel; and
a solder bump connected to said contact point through said metal contact. - View Dependent Claims (18, 19, 20, 21, 22)
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Specification