Plasma Immersion Ion Implantation Using Conductive Mesh

• US 20070268089A1
• Filed: 10/28/2004
• Published: 11/22/2007
• Est. Priority Date: 10/31/2003
• Status: Abandoned Application

• Current Assignee: Heartware,Inc. (Medtronic Plc), HeartWare Pty Ltd. (Medtronic Plc), University of Sydney, Ventracor Limited
• Original Assignee: University of Sydney, Ventracor Limited
• Inventors: McKenzie, David, Powles, Rebecca
• Application Number:
  US10/577,604
• Publication Number:
  US 20070268089A1
• Time in Patent Office: Days
• US Class Current: 333/99.PL
• CPC Class Codes: A61M 60/148 in line with a blood vessel using resection or like techniques, e.g. permanent endovascular heart assist devices
• CPC Class Codes: A61M 60/422 the force acting on the blood contacting member being electromagnetic, e.g. using canned motor pumps
• CPC Class Codes: A61M 60/824 Hydrodynamic or fluid film bearings
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation

Abstract

A plasma process (5) for modifying at least a region of a surface of a component (1); wherein the component (1) is bombarded by ions from a gas plasma environment (4); and the ions are drawn towards the component (1) by a voltage source applied to a first mesh (3). The first mesh (3) is a stationary non-conformal mesh (3), and the component (1) does not contact the first mesh (3). The component (1) is moved (2) in the vicinity of the first mesh (3) to evenly expose it to ion bombardment (4).

Claims

1. A plasma processor for modifying at least a region of a surface of a component;

wherein said component is bombarded by ions from a gas plasma environment;

said ions are drawn towards said component by a voltage source applied to a first mesh, wherein said first mesh is a stationary non-conformal conductive mesh;

characterised in that the component does not contact the first mesh and the component is moved in the vicinity of said first mesh to evenly expose it to ion bombardment.

2. The plasma processor as claimed in claim 1, wherein said first mesh substantially encapsulates said component.

3. The plasma processor as claimed in claim 2, wherein said component is mounted on an oscillating and/or rotating support.

4. The plasma processor as claimed in claim 2, wherein said component is encapsulated by a movable second mesh that is a non-conformal non-conductive mesh encapsulated within the first mesh.

5. The plasma processor as claimed in claim 1, wherein said voltage source provides a pulsed voltage.

6. The plasma processor as claimed in claim 1, wherein said component is non-conducting.

7. The plasma processor as claimed in claim 1, wherein said component is a polymeric component.

8. The plasma processor as claimed in claim 7, wherein said component is part of a blood pump.

9. A method for modifying a surfaces of a component;

wherein said component is bombarded by ions from a gas plasma environment;

said ions are drawn towards said component by a voltage source applied to a first mesh, wherein said first mesh is a stationary non-conformal conductive mesh;

characterised in that the component does not contact the first mesh and the component is moved in the vicinity of said first mesh to evenly expose it to ion bombardment.

10. The method as claimed in claim 9, wherein said component is mounted on an oscillating and/or rotating support.

11. The method as claimed in claim 9, wherein said component is encapsulated by a movable second mesh that is a non-conformal non-conductive mesh encapsulated within the first mesh.

12. The method as claimed in claim 9, wherein said voltage source provides a pulsed voltage.

13. The method as claimed in claim 9, wherein said component does not contact said first mesh.

14. The method as claimed in claim 9, wherein said component is non-conducting.

15. The method as claimed in claim 9, wherein said component is a polymeric component.

16. The method as claimed in claim 9, wherein said component is part of a blood pump.